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MMBT6517 Specs and Replacement


   Type Designator: MMBT6517
   SMD Transistor Code: 1Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT23
 

 MMBT6517 Substitution

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MMBT6517 detailed specifications

 ..1. Size:230K  motorola
mmbt6517.pdf pdf_icon

MMBT6517

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6517LT1/D High Voltage Transistor MMBT6517LT1 NPN Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 350 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 350 Vdc Emitter Base Voltage VE... See More ⇒

 ..2. Size:1414K  kexin
mmbt6517.pdf pdf_icon

MMBT6517

SMD Type Transistors NPN Transistors MMBT6517 (KMBT6517) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=350V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 3 1.Base COLLECTOR 2.Emitter 3.collector 1 BASE 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating... See More ⇒

 ..3. Size:1836K  eicsemi
mmbt6517.pdf pdf_icon

MMBT6517

TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT6517 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 350 V Collector Base Voltage VCBO 350... See More ⇒

 0.1. Size:124K  onsemi
mmbt6517lt1g.pdf pdf_icon

MMBT6517

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C... See More ⇒

Detailed specifications: MMBT5857 , MMBT5858 , MMBT5910 , MMBT6076 , MMBT6427 , MMBT6427LT1 , MMBT6428 , MMBT6429 , 2N3904 , MMBT6520 , MMBT6543 , MMBT8598 , MMBT8599 , MMBT918 , MMBT918R , MMBT930 , MMBT930R .

History: MMBT6076

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