MMBTA20 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBTA20

Código: 1C_3J

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.33 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 125 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: SOT23

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MMBTA20 datasheet

 0.1. Size:413K  motorola
 mmbta20l.pdf pdf_icon

MMBTA20

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA20LT1/D General Purpose Amplifier MMBTA20LT1 NPN Silicon COLLECTOR 3 1 3 BASE 1 2 2 EMITTER CASE 318 08, STYLE 6 MAXIMUM RATINGS SOT 23 (TO 236AB) Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Emitter Base Voltage VEBO 4.0 Vdc Collector Current Continuous IC 100 mAdc THERMAL C

 0.2. Size:107K  onsemi
 mmbta20lt1.pdf pdf_icon

MMBTA20

MMBTA20LT1 General Purpose Amplifier NPN Silicon Features Pb-Free Package is Available http //onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc 1 BASE Emitter-Base Voltage VEBO 4.0 Vdc Collector Current - Continuous IC 100 mAdc 2 THERMAL CHARACTERISTICS EMITTER Characteristic Symbol Max Unit Total Device Dissipation FR-5

 8.1. Size:870K  fairchild semi
 mmbta28.pdf pdf_icon

MMBTA20

MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 C B SuperSOT-3 B SOT-223 E Mark 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Colle

 8.2. Size:628K  fairchild semi
 mpsa28 mmbta28 pzta28.pdf pdf_icon

MMBTA20

MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 C B SuperSOT-3 B SOT-223 E Mark 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Colle

MOSTRAR MÁS

Otros transistores... MMBTA05LT1, MMBTA06, MMBTA06LT1, MMBTA12, MMBTA13, MMBTA13LT1, MMBTA14, MMBTA14LT1, D882, MMBTA20LT1, MMBTA28, MMBTA42, MMBTA42LT1, MMBTA43, MMBTA43LT1, MMBTA55, MMBTA55LT1