MMBTA20 Todos los transistores

 

MMBTA20 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBTA20
   Código: 1C_3J
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.33 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 125 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT23
 
   - Selección ⓘ de transistores por parámetros

 

MMBTA20 Datasheet (PDF)

 0.1. Size:413K  motorola
mmbta20l.pdf pdf_icon

MMBTA20

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA20LT1/DGeneral Purpose AmplifierMMBTA20LT1NPN SiliconCOLLECTOR313BASE122EMITTERCASE 31808, STYLE 6MAXIMUM RATINGSSOT23 (TO236AB)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current Continuous IC 100 mAdcTHERMAL C

 0.2. Size:107K  onsemi
mmbta20lt1.pdf pdf_icon

MMBTA20

MMBTA20LT1General Purpose AmplifierNPN SiliconFeatures Pb-Free Package is Availablehttp://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector-Emitter Voltage VCEO 40 Vdc1BASEEmitter-Base Voltage VEBO 4.0 VdcCollector Current - Continuous IC 100 mAdc2THERMAL CHARACTERISTICSEMITTERCharacteristic Symbol Max UnitTotal Device Dissipation FR-5

 8.1. Size:870K  fairchild semi
mmbta28.pdf pdf_icon

MMBTA20

MPSA28 MMBTA28 PZTA28CCEECBTO-92CBSuperSOT-3BSOT-223EMark: 3SSNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 500 mA. Sourcedfrom Process 03.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 80 VVCBO Colle

 8.2. Size:628K  fairchild semi
mpsa28 mmbta28 pzta28.pdf pdf_icon

MMBTA20

MPSA28 MMBTA28 PZTA28CCEECBTO-92CBSuperSOT-3BSOT-223EMark: 3SSNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 500 mA. Sourcedfrom Process 03.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 80 VVCBO Colle

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top

 


 
.