MMBTA20 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBTA20
SMD Transistor Code: 1C_3J
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.33 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT23
MMBTA20 Transistor Equivalent Substitute - Cross-Reference Search
MMBTA20 Datasheet (PDF)
mmbta20l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA20LT1/DGeneral Purpose AmplifierMMBTA20LT1NPN SiliconCOLLECTOR313BASE122EMITTERCASE 31808, STYLE 6MAXIMUM RATINGSSOT23 (TO236AB)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current Continuous IC 100 mAdcTHERMAL C
mmbta20lt1.pdf
MMBTA20LT1General Purpose AmplifierNPN SiliconFeatures Pb-Free Package is Availablehttp://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector-Emitter Voltage VCEO 40 Vdc1BASEEmitter-Base Voltage VEBO 4.0 VdcCollector Current - Continuous IC 100 mAdc2THERMAL CHARACTERISTICSEMITTERCharacteristic Symbol Max UnitTotal Device Dissipation FR-5
mmbta28.pdf
MPSA28 MMBTA28 PZTA28CCEECBTO-92CBSuperSOT-3BSOT-223EMark: 3SSNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 500 mA. Sourcedfrom Process 03.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 80 VVCBO Colle
mpsa28 mmbta28 pzta28.pdf
MPSA28 MMBTA28 PZTA28CCEECBTO-92CBSuperSOT-3BSOT-223EMark: 3SSNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 500 mA. Sourcedfrom Process 03.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 80 VVCBO Colle
ad-mmbta28.pdf
www.jscj-elec.com AD-MMBTA28 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA28 Plastic-Encapsulated Transistor AD-MMBTA28 Transistor (NPN) FEATURES High current gain AEC-Q101 qualified MARKING 3SS = Device code 3SS EQUIVALENT CIRCUIT 3 1 2 Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA28 MAXIMUM RATINGS (T = 25C unless otherw
mmbta28.pdf
MMBTA28TRANSISTOR(NPN)FEATURES SOT23 High Current Gain MARKING: 3SS MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 80 V CBO2. EMITTER V Collector-Emitter Voltage 80 V CEO3. COLLECTOR V Emitter-Base Voltage 12 V EBOIC Collector Current 500 mA PC Collector Power Dissipation 200 mW R Thermal
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
