MMBTA93 Todos los transistores

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA92LT1/D High Voltage Transistors * MMBTA92LT1 COLLECTOR PNP Silicon 3 MMBTA93LT1 *Motorola Preferred Device 1 BASE 2 EMITTER 3 MAXIMUM RATINGS 1 Rating Symbol MMBTA92 MMBTA93 Unit 2 Collector Emitter Voltage VCEO 300 200 Vdc Collector Base Voltage VCBO 300 200 Vdc CASE 318 08, STYLE 6 SOT

MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol 92 93 Unit EMITT

SEMICONDUCTOR MMBTA92/93 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to MMBTA42/43. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.1

MMBTA93 TRANSISTOR(PNP) SOT 23 FEATURES High Voltage Application Telephone Application Complementary to MMBTA43 1. BASE MARKING YW 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -200 V CBO V Collector-Emitter Voltage -200 V CEO V Emitter-Base Voltage -5 V EBO IC Collec

MMBTA92 / MMBTA93 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MMBTA92 300 V -VCBO MMBTA93 200 Collector Emitter Voltage MMBTA92 300 V -VCEO MMBTA93 200 5 V Emitter Base Voltage -VEBO 500 mA Collector Cur

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBTA92/MMBTA93 MAXIMUM RATINGS Characteristic Symbol Unit (MMBTA92) (MMBTA93) Collector-Emitter Voltage VCEO -300 -200 Vdc - Collector-Base Voltage VCBO -300 -200 Vdc - Emitter-Base Voltage VEBO -6.0 -6.0 Vdc

MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol 92 93 Unit EMITTER

MMBTA92LT1G, MMBTA93LT1G High Voltage Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 Rating Symbol 92 93 Unit BASE Collector-Emitter Voltage VCEO -300 -200 Vdc Collector-Base Voltage VCBO -300 -200 Vdc 2 EMITTER Emitter-Base Voltage VEBO -5.0 -5.0 Vdc Collector Curren

DISCRETE SEMICONDUCTORS DATA SHEET MMBTA92 PNP high-voltage transistor Product specification 2004 Jan 16 Supersedes data of 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professi

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professional commun

MMBTA92 Small signal PNP transistor Features Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The NPN complementary type is MMBTA42 Applications Video amplifier circuits (rgb cathode current control) SOT-23 Telephone wireline interface (hook switches, dialer circuits) Description Figure 1. Intenal schematic diagram The d

MPSA92 MMBTA92 PZTA92 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 300 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 5.0

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

MMBTA92 300V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case SOT-23 Ideal for Medium Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound; Complementary NPN Type MMBTA42 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sens

MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction A SOT-23 Complementary NPN Types Available (MMBTA42) C Dim Min Max Ideal for Medium Power Amplification and Switching A 0.37 0.51 B C Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40 "Green"

SMBTA92/MMBTA92 PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets 2 3 and switching power supplies 1 High breakdown voltage Low collector-emitter saturation voltage Complementary types SMBTA42 / MMBT42 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA92/MMBTA92

SMBTA92/MMBTA92 PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets 2 3 and switching power supplies 1 High breakdown voltage Low collector-emitter saturation voltage Complementary types SMBTA92 / MMBT92 (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA92/MMBTA

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components MMBTA92 CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Surface Mount SOT-23 Package PNP Silicon High Capable of 300mWatts of Power Dissipation Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Voltage Transistor

MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol 92 93 Unit EMITT

UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR 3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed 1 for telephone signal switching and for high voltage amplifier. 2 SOT-23 FEATURES (JEDEC TO-236) * High Collector-Emitter voltage VCEO= -300V * Collector Dissipation PC(MAX)=350mW ORDERING INFOR

UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 * Collector-Emitter Voltage V = -400V CEO * Collector Dissipation P = 350mW C(MAX) * Low Collector-Emitter Saturation Voltage 1 APPLICATIONS 2 SOT-23 * Telephone Switching (JEDEC TO-236) * High Voltage Switch ORDERING INFORMATION Pin Assignment Ordering Num

MMBTA92 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max Pb-free is available. A 2.800 3.040 Power dissipation & Collector current B 1.200 1.400 Pcm 0.3W Icm -0.3A High voltage V(BR) -300V C 0.890 1.110 A D 0.370 0.500 L G 1.780 2.040 3 H 0.013 0.100 COLLECTO

MMBTA92W PNP Silicon Elektronische Bauelemente General Purpose Transistor MMBTA92W 300 VCE = 10 Vdc TJ = +125 C 250 200 25 C 150 -55 C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 150 Cib @ 1MHz 130 110 10 90 Ccb @ 1MHz 70 1.0 50 TJ = 25 C VCE = 20 Vdc 30 F = 20 MHz 0.1 10 0.1 1.0 10 100 1000 1 3 5 7 9 11 13 15 17 19 2

MMBTA94 PNP Silicon -400V, -0.1A, 350mW Elektronische Bauelemente Epitaxial Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 Top View C B MARKING 1 1 2 Product Marking Code 2 K E MMBTA44 4D D H J F G SYMBOL Millimeter Millimeter REF. REF. Collector Min. Max. Min.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Bas

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBTA94 TRANSISTOR (PNP) SOT 23 FEATURES High Breakdown Voltage MARKING 4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEO V Emitte

MMBTA92 TRANSISTOR(PNP) SOT-23 FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING 2D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -300 mA PC Collector Power Dissipation 300 m

MMBTA94 TRANSISTOR(PNP) SOT 23 FEATURES High Breakdown Voltage MARKING 4D 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -400 V V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -200 mA C I Collector Current -Pulsed -300 mA C

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA92 GMA93 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Unit GMA92 GMA93 Collector-Emitter Voltage VCEO -300 -200 Vdc -

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA94 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO -400 V Collector-Emitter Voltage - Collec

MMBTA92 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High voltage transistor MARKING 2D Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous

MMBTA92 COLLECTOR High-Voltage PNP Transistor 3 3 Surface Mount 1 1 2 BASE P b Lead(Pb)-Free 2 SOT-23 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-E m itter Voltage V -3 0 0 Vdc CE O Collector-B as e Voltage VCB O -3 0 0 Vdc E m itter-B as e VOltage VE B O -5 . 0 Vdc Collector Current-Continuous IC mAdc -5 0 0 Thermal Characteristics Characteristics Symbol

MMBTA94 COLLECTOR High-Voltage PNP Transistor Surface Mount 3 SOT-23 3 P b Lead(Pb)-Free 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V -400 Vdc CEO Collector-Base Voltage VCBO -400 Vdc Emitter-Base Voltage VEBO -6.0 Vdc Collector Current-Continuous IC mAdc -150 Thermal Characteristics Characteristics Symbol Max Unit Maximum Power

FM120-M WILLAS THRU MMBTA94LT1 PNP EPITAXIAL PLANAR BARRIER RECTIFIERS -20V- 200V TRANSISTOR FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent powe We declare that the material of producter dissipation offers better reverse leakage current and th rmal resistance. SOD-123H compliance with RoHS re

FM120-M WILLAS THRU MMBTA9xLT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V High Voltage Transistor SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board

MMBTA92 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , , , MMBTA42 High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42. / Applications

MMBTA94 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , High voltage, low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit

MMBTA94T Rev.E Mar.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1 Base

MMBTA92T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , , , MMBTA42T High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42T. / Applications

SEMICONDUCTOR MMBTA92/93 TECHNICAL DATA High Voltage Transistor PNP Silicon FEATURE High voltage. For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements. 3 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking Shipping SOT 23 MMBTA92LT1G 2D 3000/Tape&Reel MMBTA92LT3G 2D 10000/Tape&Ree

SEMICONDUCTOR MMBTA94 TECHNICAL DATA PNP EPITAXIAL PLANAR TRANSISTOR 3 We declare that the material of product 2 compliance with RoHS requirements. 1 Description SOT 23 The MMBTA94 is designed for application that requires high voltage. COLLECTOR Features 3 High Breakdown Voltage VCEO=400(Min.) at IC=1mA 1 BASE DEVICE MARKING 2 MMB TA94LT1G = 4Z EMITTER Absolute

SEMICONDUCTOR MMBTA92F TECHNICAL DATA TRANSISTOR (PNP) MMBTA92F A C H G FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage D D K F F MARKING A92 DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX _ + F 1.50 0.10 Symbol Parameter Value Unit G 0.40 T

SMD Type Transistors PNP Transistors MMBTA92 (KMBTA92) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High voltage transistor Low collector-emitter saturation voltage Complementary to MMBTA42 (NPN) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

SMD Type Transistors PNP Transistors MMBTA94 (KMBTA94) 3 Features High Breakdown Voltage Complement to MMBTA44 12 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -40

General Purpose Transistor MMBTA92-G (PNP) RoHS Device Features SOT-23 0.119(3.00) -High voltage transistor. 0.110(2.80) 3 0.056(1.40) 0.047(1.20) Diagram 1 2 0.079(2.00) Collector 0.071(1.80) 3 0.006(0.15) 0.003(0.08) 1 0.041(1.05) 0.100(2.550) Base 0.035(0.90) 0.089(2.250) 2 0.004(0.10) max Emitter 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimensions in

MMBTA92 TRANSISTOR PNP TRANSISTOR PNP FEATURES SOT-23 High voltage transistor 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA ICM Collector Current -Pulsed -50

MMBTA94 TRANSISTOR (PNP) SOT 23 FEATURES High Breakdown Voltage MARKING 4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -200 mA C I Collector Current -Pulsed

R UMW UMW MMBTA92 SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Curre

MMBTA92 FEATURES High Collector Current SOT-23 Complementary to MMBTA42 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -300 V CBO V Collector-Emitter Voltage CEO -300 V V Emitter-Base Voltage -5 V EBO IC Collector Current -0.2 A P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To

MMBTA9 2 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 High voltage transistor Marking 2D Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V V Collector-Emitter Voltage -300 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current C -200 mA ICM Collector Current - Pulsed -500 mA P Collector Power Dissipation

MMBTA92 PNP High Voltage Amplifier FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBTA42). Ideal for medium power amplification and switching. APPLICATIONS High voltage driver applications. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT V collector-base voltage -300 V CBO V collector-

MMBTA92 SOT-23 Plastic-Encapsulate Transistor MMBTA92 TRANSISTOR (PNP) SOT-23 FEATURES High voltage transistor Marking 2D (3)C 1. BASE 2D 2. EMITTER 3. COLLECTOR (1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage -300 VCEO Collector-Emitter Voltage V -300 VEBO Emitter-Base Voltage -5 V IC Co

www.msksemi.com MMBTA92-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High voltage transistor 1. BASE 2. EMITTER SOT 23 MARKING 2D 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collecto

www.msksemi.com MMBTA94-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High Breakdown Voltage 1. BASE MARKING 4D 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -400 V CBO V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Co

MMBTA94 PNP Transistor Features SOT-23 For high voltage switching and amplifier applications The transistor is subdivided into one group according to its DC current gain. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Value Units Collector Base Voltage -V 400 V CBO Collector Emitter Voltage -V 400 V CEO Emitter Base Voltage -V 6 V EBO C

Jingdao Microelectronics co.LTD MMBTA92 MMBTA92 SOT-23 PNP TRANSISTOR 3 FEATURES High Voltage Transistor 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol 2 Parameter Value Unit VCBO V 1.BASE Collector Base Voltage -300 2.EMITTER VCEO V Collector Emitter Voltage -300 3.COLLECTOR VEBO V Emitter Base V

MMBTA92 SOT-23 Plastic-Encapsulate Transistors MMBTA92 TRANSISTOR (PNP) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continu

MMBTA92 TRANSISTOR (PNP) SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES High voltage transistor 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 m

MMBTA92 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High voltage transistor Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA42 (NPN) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage VCEO -300 V Emitter

MMBTA92 TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES High Breakdown Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -200 mA Collector Current -Puised ICM -

MMBTA94 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA44 ; Complementary to MMBTA44 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

RoHS RoHS COMPLIANT COMPLIANT MMBTA92 PNP Silicon High Voltage Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-23 P Terminals Tin plated leads, s

SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBTA94 FEATURES MAXIMUM RATINGS Characteristic Symbol Rating Unit V -400 V Collector-Emitter Voltage - CEO Collector-Base Voltage - V -400 V CBO Emitter-Base Voltage V -7 V

MMBTA92 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE -300Volts POWER 300mWatts FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-300V. Collector current IC=-0.3A. ansition frequency fT>200MHz @ IC=- Tr 20mAdc, VCE=-50Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminal

MMBTA92 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBTA42 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A

MMBTA94 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBTA44 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A