MMBTA93 Datasheet. Specs and Replacement
Type Designator: MMBTA93 📄📄
SMD Transistor Code: 2E_3e
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.33 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO236
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MMBTA93 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA92LT1/D High Voltage Transistors * MMBTA92LT1 COLLECTOR PNP Silicon 3 MMBTA93LT1 *Motorola Preferred Device 1 BASE 2 EMITTER 3 MAXIMUM RATINGS 1 Rating Symbol MMBTA92 MMBTA93 Unit 2 Collector Emitter Voltage VCEO 300 200 Vdc Collector Base Voltage VCBO 300 200 Vdc CASE 318 08, STYLE 6 SOT... See More ⇒
MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol 92 93 Unit EMITT... See More ⇒
SEMICONDUCTOR MMBTA92/93 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to MMBTA42/43. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.1... See More ⇒
MMBTA93 TRANSISTOR(PNP) SOT 23 FEATURES High Voltage Application Telephone Application Complementary to MMBTA43 1. BASE MARKING YW 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -200 V CBO V Collector-Emitter Voltage -200 V CEO V Emitter-Base Voltage -5 V EBO IC Collec... See More ⇒
MMBTA92 / MMBTA93 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MMBTA92 300 V -VCBO MMBTA93 200 Collector Emitter Voltage MMBTA92 300 V -VCEO MMBTA93 200 5 V Emitter Base Voltage -VEBO 500 mA Collector Cur... See More ⇒
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBTA92/MMBTA93 MAXIMUM RATINGS Characteristic Symbol Unit (MMBTA92) (MMBTA93) Collector-Emitter Voltage VCEO -300 -200 Vdc - Collector-Base Voltage VCBO -300 -200 Vdc - Emitter-Base Voltage VEBO -6.0 -6.0 Vdc ... See More ⇒
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DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professional commun... See More ⇒
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
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MMBTA94 COLLECTOR High-Voltage PNP Transistor Surface Mount 3 SOT-23 3 P b Lead(Pb)-Free 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V -400 Vdc CEO Collector-Base Voltage VCBO -400 Vdc Emitter-Base Voltage VEBO -6.0 Vdc Collector Current-Continuous IC mAdc -150 Thermal Characteristics Characteristics Symbol Max Unit Maximum Power... See More ⇒
FM120-M WILLAS THRU MMBTA94LT1 PNP EPITAXIAL PLANAR BARRIER RECTIFIERS -20V- 200V TRANSISTOR FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent powe We declare that the material of producter dissipation offers better reverse leakage current and th rmal resistance. SOD-123H compliance with RoHS re... See More ⇒
FM120-M WILLAS THRU MMBTA9xLT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V High Voltage Transistor SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board... See More ⇒
MMBTA92 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , , , MMBTA42 High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42. / Applications ... See More ⇒
MMBTA94 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , High voltage, low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit ... See More ⇒
MMBTA94T Rev.E Mar.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1 Base... See More ⇒
MMBTA92T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , , , MMBTA42T High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42T. / Applications ... See More ⇒
SEMICONDUCTOR MMBTA92/93 TECHNICAL DATA High Voltage Transistor PNP Silicon FEATURE High voltage. For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements. 3 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking Shipping SOT 23 MMBTA92LT1G 2D 3000/Tape&Reel MMBTA92LT3G 2D 10000/Tape&Ree... See More ⇒
SEMICONDUCTOR MMBTA94 TECHNICAL DATA PNP EPITAXIAL PLANAR TRANSISTOR 3 We declare that the material of product 2 compliance with RoHS requirements. 1 Description SOT 23 The MMBTA94 is designed for application that requires high voltage. COLLECTOR Features 3 High Breakdown Voltage VCEO=400(Min.) at IC=1mA 1 BASE DEVICE MARKING 2 MMB TA94LT1G = 4Z EMITTER Absolute... See More ⇒
SEMICONDUCTOR MMBTA92F TECHNICAL DATA TRANSISTOR (PNP) MMBTA92F A C H G FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage D D K F F MARKING A92 DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX _ + F 1.50 0.10 Symbol Parameter Value Unit G 0.40 T... See More ⇒
SMD Type Transistors PNP Transistors MMBTA92 (KMBTA92) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High voltage transistor Low collector-emitter saturation voltage Complementary to MMBTA42 (NPN) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit ... See More ⇒
SMD Type Transistors PNP Transistors MMBTA94 (KMBTA94) 3 Features High Breakdown Voltage Complement to MMBTA44 12 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -40... See More ⇒
General Purpose Transistor MMBTA92-G (PNP) RoHS Device Features SOT-23 0.119(3.00) -High voltage transistor. 0.110(2.80) 3 0.056(1.40) 0.047(1.20) Diagram 1 2 0.079(2.00) Collector 0.071(1.80) 3 0.006(0.15) 0.003(0.08) 1 0.041(1.05) 0.100(2.550) Base 0.035(0.90) 0.089(2.250) 2 0.004(0.10) max Emitter 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimensions in... See More ⇒
MMBTA92 TRANSISTOR PNP TRANSISTOR PNP FEATURES SOT-23 High voltage transistor 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA ICM Collector Current -Pulsed -50... See More ⇒
MMBTA94 TRANSISTOR (PNP) SOT 23 FEATURES High Breakdown Voltage MARKING 4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -200 mA C I Collector Current -Pulsed ... See More ⇒
R UMW UMW MMBTA92 SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Curre... See More ⇒
MMBTA92 FEATURES High Collector Current SOT-23 Complementary to MMBTA42 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -300 V CBO V Collector-Emitter Voltage CEO -300 V V Emitter-Base Voltage -5 V EBO IC Collector Current -0.2 A P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To ... See More ⇒
MMBTA9 2 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 High voltage transistor Marking 2D Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V V Collector-Emitter Voltage -300 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current C -200 mA ICM Collector Current - Pulsed -500 mA P Collector Power Dissipation... See More ⇒
MMBTA92 PNP High Voltage Amplifier FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBTA42). Ideal for medium power amplification and switching. APPLICATIONS High voltage driver applications. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT V collector-base voltage -300 V CBO V collector-... See More ⇒
MMBTA92 SOT-23 Plastic-Encapsulate Transistor MMBTA92 TRANSISTOR (PNP) SOT-23 FEATURES High voltage transistor Marking 2D (3)C 1. BASE 2D 2. EMITTER 3. COLLECTOR (1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage -300 VCEO Collector-Emitter Voltage V -300 VEBO Emitter-Base Voltage -5 V IC Co... See More ⇒
www.msksemi.com MMBTA92-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High voltage transistor 1. BASE 2. EMITTER SOT 23 MARKING 2D 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collecto... See More ⇒
www.msksemi.com MMBTA94-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High Breakdown Voltage 1. BASE MARKING 4D 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -400 V CBO V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Co... See More ⇒
MMBTA94 PNP Transistor Features SOT-23 For high voltage switching and amplifier applications The transistor is subdivided into one group according to its DC current gain. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Value Units Collector Base Voltage -V 400 V CBO Collector Emitter Voltage -V 400 V CEO Emitter Base Voltage -V 6 V EBO C... See More ⇒
Jingdao Microelectronics co.LTD MMBTA92 MMBTA92 SOT-23 PNP TRANSISTOR 3 FEATURES High Voltage Transistor 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol 2 Parameter Value Unit VCBO V 1.BASE Collector Base Voltage -300 2.EMITTER VCEO V Collector Emitter Voltage -300 3.COLLECTOR VEBO V Emitter Base V... See More ⇒
MMBTA92 SOT-23 Plastic-Encapsulate Transistors MMBTA92 TRANSISTOR (PNP) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continu... See More ⇒
MMBTA92 TRANSISTOR (PNP) SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES High voltage transistor 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 m... See More ⇒
MMBTA92 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High voltage transistor Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA42 (NPN) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage VCEO -300 V Emitter... See More ⇒
mmbta92l mmbta92h mmbta92j.pdf
MMBTA92 TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES High Breakdown Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -200 mA Collector Current -Puised ICM -... See More ⇒
MMBTA94 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA44 ; Complementary to MMBTA44 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package... See More ⇒
RoHS RoHS COMPLIANT COMPLIANT MMBTA92 PNP Silicon High Voltage Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-23 P Terminals Tin plated leads, s... See More ⇒
SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 ... See More ⇒
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBTA94 FEATURES MAXIMUM RATINGS Characteristic Symbol Rating Unit V -400 V Collector-Emitter Voltage - CEO Collector-Base Voltage - V -400 V CBO Emitter-Base Voltage V -7 V... See More ⇒
MMBTA92 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE -300Volts POWER 300mWatts FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-300V. Collector current IC=-0.3A. ansition frequency fT>200MHz @ IC=- Tr 20mAdc, VCE=-50Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminal... See More ⇒
MMBTA92 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBTA42 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A... See More ⇒
MMBTA94 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBTA44 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A... See More ⇒
Detailed specifications: MMBTA63, MMBTA63LT1, MMBTA64, MMBTA64LT1, MMBTA70, MMBTA70LT1, MMBTA92, MMBTA92LT1, BD335, MMBTA93LT1, MMBTH10, MMBTH24, MMBTH81, MMBTH81LT1, MMCM2221, MMCM2222, MMCM2369
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