MN49 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MN49
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-base (Vcb): 80 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.1 MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar MN49
MN49 Datasheet (PDF)
pmn49en.pdf
PMN49ENN-channel TrenchMOS logic level FETRev. 01 13 April 2007 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Fast switching1.3 Applications Battery management High-speed switching1.4 Quick reference data
mmn4942dy.pdf
MMN4942DYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited40V Dual N-Channel Enhancement-Mode MOSFETVDS= 40VRDS(ON), Vgs@10V, Ids@7.4A = 21mRDS(ON), Vgs@4.5V, Ids@6.4A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2
mmn4946bey.pdf
MMN4946BEYData SheetM-MOS Semiconductor Hong Kong Limited60V Dual N-Channel Enhancement-Mode MOSFETVDS= 60VRDS(ON), Vgs@10V, Ids@5.3A = 41mRDS(ON), Vgs@4.5V, Ids@4.7A = 52mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2 Top View N
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: NPS2218A | 2SC905 | NJVNJD2873T4G | KTA1704 | NKT216 | KTD1303 | KSC5047
History: NPS2218A | 2SC905 | NJVNJD2873T4G | KTA1704 | NKT216 | KTD1303 | KSC5047
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050