MN49 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MN49
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-base (Vcb): 80 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.1 MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar MN49
MN49 Datasheet (PDF)
pmn49en.pdf
PMN49ENN-channel TrenchMOS logic level FETRev. 01 13 April 2007 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Fast switching1.3 Applications Battery management High-speed switching1.4 Quick reference data
mmn4942dy.pdf
MMN4942DYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited40V Dual N-Channel Enhancement-Mode MOSFETVDS= 40VRDS(ON), Vgs@10V, Ids@7.4A = 21mRDS(ON), Vgs@4.5V, Ids@6.4A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2
mmn4946bey.pdf
MMN4946BEYData SheetM-MOS Semiconductor Hong Kong Limited60V Dual N-Channel Enhancement-Mode MOSFETVDS= 60VRDS(ON), Vgs@10V, Ids@5.3A = 41mRDS(ON), Vgs@4.5V, Ids@4.7A = 52mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2 Top View N
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
