MN49 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MN49

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 90 W

Tensión colector-base (Vcb): 80 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.1 MHz

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO3

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MN49 datasheet

 0.1. Size:84K  philips
 pmn49en.pdf pdf_icon

MN49

PMN49EN N-channel TrenchMOS logic level FET Rev. 01 13 April 2007 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Fast switching 1.3 Applications Battery management High-speed switching 1.4 Quick reference data

 0.2. Size:158K  m-mos
 mmn4942dy.pdf pdf_icon

MN49

MMN4942DY Preliminary Data Sheet M-MOS Semiconductor Hong Kong Limited 40V Dual N-Channel Enhancement-Mode MOSFET VDS= 40V RDS(ON), Vgs@10V, Ids@7.4A = 21m RDS(ON), Vgs@4.5V, Ids@6.4A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2

 0.3. Size:158K  m-mos
 mmn4946bey.pdf pdf_icon

MN49

MMN4946BEY Data Sheet M-MOS Semiconductor Hong Kong Limited 60V Dual N-Channel Enhancement-Mode MOSFET VDS= 60V RDS(ON), Vgs@10V, Ids@5.3A = 41m RDS(ON), Vgs@4.5V, Ids@4.7A = 52m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2 Top View N

Otros transistores... MN21, MN24, MN25, MN26, MN28, MN29, MN32, MN48, 2SA1837, MO810, MO816, MO818, MO870, MP10, MP101, MP101A, MP101B