MN49 Datasheet, Equivalent, Cross Reference Search
Type Designator: MN49
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3
MN49 Transistor Equivalent Substitute - Cross-Reference Search
MN49 Datasheet (PDF)
pmn49en.pdf
PMN49ENN-channel TrenchMOS logic level FETRev. 01 13 April 2007 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Fast switching1.3 Applications Battery management High-speed switching1.4 Quick reference data
mmn4942dy.pdf
MMN4942DYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited40V Dual N-Channel Enhancement-Mode MOSFETVDS= 40VRDS(ON), Vgs@10V, Ids@7.4A = 21mRDS(ON), Vgs@4.5V, Ids@6.4A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2
mmn4946bey.pdf
MMN4946BEYData SheetM-MOS Semiconductor Hong Kong Limited60V Dual N-Channel Enhancement-Mode MOSFETVDS= 60VRDS(ON), Vgs@10V, Ids@5.3A = 41mRDS(ON), Vgs@4.5V, Ids@4.7A = 52mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2 Top View N
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
