MN49 Specs and Replacement
Type Designator: MN49
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO3
MN49 Substitution
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MN49 datasheet
PMN49EN N-channel TrenchMOS logic level FET Rev. 01 13 April 2007 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Fast switching 1.3 Applications Battery management High-speed switching 1.4 Quick reference data ... See More ⇒
MMN4942DY Preliminary Data Sheet M-MOS Semiconductor Hong Kong Limited 40V Dual N-Channel Enhancement-Mode MOSFET VDS= 40V RDS(ON), Vgs@10V, Ids@7.4A = 21m RDS(ON), Vgs@4.5V, Ids@6.4A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2 ... See More ⇒
MMN4946BEY Data Sheet M-MOS Semiconductor Hong Kong Limited 60V Dual N-Channel Enhancement-Mode MOSFET VDS= 60V RDS(ON), Vgs@10V, Ids@5.3A = 41m RDS(ON), Vgs@4.5V, Ids@4.7A = 52m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2 Top View N... See More ⇒
Detailed specifications: MN21, MN24, MN25, MN26, MN28, MN29, MN32, MN48, 2SA1837, MO810, MO816, MO818, MO870, MP10, MP101, MP101A, MP101B
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