MN49 Datasheet and Replacement
Type Designator: MN49
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3
MN49 Substitution
MN49 Datasheet (PDF)
pmn49en.pdf

PMN49ENN-channel TrenchMOS logic level FETRev. 01 13 April 2007 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Fast switching1.3 Applications Battery management High-speed switching1.4 Quick reference data
mmn4942dy.pdf

MMN4942DYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited40V Dual N-Channel Enhancement-Mode MOSFETVDS= 40VRDS(ON), Vgs@10V, Ids@7.4A = 21mRDS(ON), Vgs@4.5V, Ids@6.4A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2
mmn4946bey.pdf

MMN4946BEYData SheetM-MOS Semiconductor Hong Kong Limited60V Dual N-Channel Enhancement-Mode MOSFETVDS= 60VRDS(ON), Vgs@10V, Ids@5.3A = 41mRDS(ON), Vgs@4.5V, Ids@4.7A = 52mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2 Top View N
Datasheet: MN21 , MN24 , MN25 , MN26 , MN28 , MN29 , MN32 , MN48 , BC546 , MO810 , MO816 , MO818 , MO870 , MP10 , MP101 , MP101A , MP101B .
History: MP506 | 3CA1370 | DTC123YKAFRA | 2SC979 | CTP1033 | 2SA505O | TD13005
Keywords - MN49 transistor datasheet
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History: MP506 | 3CA1370 | DTC123YKAFRA | 2SC979 | CTP1033 | 2SA505O | TD13005



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