MP40 Todos los transistores

 0.1. Size:359K  1
 dmp4015sps-13.pdf

DMP4015SPS Green 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test In Production ID V(BR)DSS RDS(on) max TA = +25 C Low On-Resistance Fast Switching Speed 11m @ VGS = -10V -17A -40V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 15m @ VGS = -4.5V -14.5A Halogen and

 0.2. Size:1039K  1
 cmp40p03.pdf

CMP40P03 P-Ch -30V Fast Switching MOSFETs General Description Product Summery The CMP40P03 is a P-channel Power BVDSS RDSON ID MOSFET. It has specifically been designed to minimize input capacitance -30V 14m -40A and gate charge. The device is therefore suitable in advanced Applications high-efficiency switching applications. LED POWER CONTROLLER DC-DC & DC-AC CONVERTERS

 0.3. Size:159K  toshiba
 mp4006.pdf

MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4006 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) I = 2 A (max) C (DC)

 0.4. Size:185K  toshiba
 mp4005.pdf

MP4005 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4005 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) P = 4 W (Ta = 25 C) T

 0.5. Size:127K  toshiba
 mp4020.pdf

MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4020 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) P = 4 W (Ta = 25 C) T

 0.6. Size:177K  toshiba
 mp4015 .pdf

MP4015 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors in One) MP4015 Industrial Applications High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) PT = 4 W (Ta = 25 C)

 0.7. Size:130K  toshiba
 mp4015.pdf

MP4015 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4015 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive. Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) P = 4 W (Ta = 25 C) T

 0.8. Size:227K  toshiba
 mp4005 .pdf

MP4005 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4005 Industrial Applications High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) PT = 4 W (Ta = 25 C

 0.9. Size:134K  toshiba
 mp4009.pdf

MP4009 TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Darlington power transistor 4 in 1) MP4009 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive. Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) P = 4 W (Ta = 25 C) T

 0.10. Size:104K  toshiba
 mp4024.pdf

MP4024 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4024 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) Built-in resistance (R ). B Surge voltage is clamped by zener diode (C-B).

 0.11. Size:126K  toshiba
 mp4013.pdf

MP4013 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4013 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) P = 4 W (Ta = 25 C) T

 0.12. Size:157K  toshiba
 mp4025 .pdf

 0.13. Size:127K  toshiba
 mp4021.pdf

MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4021 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) P = 4 W (Ta = 25 C) T

 0.14. Size:85K  toshiba
 mp4025.pdf

MP4025 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) MP4025 Industrial Applications High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pin) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B). Low

 0.15. Size:167K  toshiba
 mp4013 .pdf

MP4013 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors 4 in One) MP4013 Industrial Applications High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) PT = 4 W (Ta = 25 C)

 0.16. Size:152K  toshiba
 mp4024 .pdf

 0.17. Size:217K  toshiba
 mp4006 .pdf

MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4006 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) IC (DC) = 2 A (m

 0.18. Size:174K  toshiba
 mp4009 .pdf

MP4009 TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One) MP4009 Industrial Applications High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) PT = 4 W (Ta = 25 C)

 0.19. Size:165K  toshiba
 mp4021 .pdf

MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4021 Industrial Applications High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) PT = 4 W (Ta = 25 C)

 0.20. Size:166K  toshiba
 mp4020 .pdf

MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Fourd Darlington Power tTransistors in One) MP4020 Industrial Applications High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) PT = 4 W (Ta = 25 C)

 0.21. Size:363K  diodes
 dmp4015spsq.pdf

DMP4015SPSQ Green 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test In Production ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25 C Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 11m @ VGS = -10V -17.0A Halogen and Antimony Free. Green Device

 0.22. Size:281K  diodes
 dmp4047ssd.pdf

DMP4047SSD 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistance TA = +25 C Fast switching speed 45m @ VGS = -10V -6.5A -40V Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 55m @ VGS = -4.5V -5.9A Halogen and Antimony Free. Gre

 0.23. Size:270K  diodes
 dmp4015sssq.pdf

DMP4015SSSQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Input Capacitance TA = +25 C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 11m @ VGS = -10V -10.1A Halogen and Antimony Free. Green Device (Note 3) -40V Qualified to

 0.24. Size:202K  diodes
 dmp4015sps.pdf

DMP4015SPS Green 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low on-resistance TA = 25 C Fast switching speed 11m @ VGS = -10V -17.0A " Green component and RoHS compliant (Note 1) -40V Qualified to AEC-Q101 Standards for Hig

 0.25. Size:286K  diodes
 dmp4025lsd.pdf

A Product Line of Diodes Incorporated DMP4025LSD 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max (A) Low RDS(on) Minimizes conduction losses V(BR)DSS RDS(on) max TA = +25 C Fast switching speed Minimizes switching losses 25m @ VGS = -10V -7.6 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -40V 45m @

 0.26. Size:224K  diodes
 dmp4015sk3.pdf

DMP4015SK3 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low on-resistance TA = 25 C Fast switching speed 11m @ VGS = -10V -14.0A Green component and RoHS compliant (Note 1) -40V Qualified to AEC-Q101 Standards for High Reliability 15m

 0.27. Size:236K  diodes
 dmp4047lfde.pdf

DMP4047LFDE 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max Package PCB footprint of 4mm2 TA = +25 C Low Gate Threshold Voltage 33m @ VGS = -10V -6A U-DFN2020-6 Low On-Resistance -40V Type E 50m @ VGS = -4.5V -4.9A Totally Lead-Free & Fully RoHS Com

 0.28. Size:263K  diodes
 dmp4025sfg.pdf

A Product Line of Diodes Incorporated DMP4025SFG 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(on) Minimizes conduction losses V(BR)DSS RDS(on) max TA = +25 C Fast switching speed Minimizes switching losses (Notes 6) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 25m @ VGS = -10V - 7.2A -40V Hal

 0.29. Size:314K  diodes
 dmp4015sk3q.pdf

 0.30. Size:516K  diodes
 dmp4013lfg.pdf

DMP4013LFG 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized. ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25 C 13m @ VGS = -10V -10.3A density end products. -40V 18m @ VGS = -4.5V -8.8A Occupies 33% of the board area

 0.31. Size:668K  diodes
 dmp4051lk3.pdf

A Product Line of Diodes Incorporated Green DMP4051LK3 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 51m @ VGS= -10V -10.5A Qualified to AEC-Q101 Standards for High Reliability -40V 85m @ VGS= -4.5V -8.4

 0.32. Size:701K  diodes
 dmp4050ssd.pdf

A Product Line of Diodes Incorporated DMP4050SSD 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID Fast switching speed V(BR)DSS RDS(on) Max TA = 25 C Lead-Free , RoHS Compliant (Note 1) (Notes 4 & 6) Halogen and Antimony Free, Green Device (Note 1) 50m @ VGS = -10V -5.2A Qualified to

 0.33. Size:437K  diodes
 dmp4065sq.pdf

DMP4065SQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed -3.4A 80m @ VGS = -10V Low Input/Output Leakage -40V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100m @ VGS = -4.5V -3.0A Halogen and Antimony F

 0.34. Size:187K  diodes
 dmp4025lss.pdf

A Product Line of Diodes Incorporated DMP4025LSS 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(on) Minimizes conduction losses ID max (A) Fast switching speed Minimizes switching losses V(BR)DSS RDS(on) max TA = 25 C Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) (Notes 6) Halogen and Antimony Free. Gr

 0.35. Size:603K  diodes
 dmp4013lfgq.pdf

DMP4013LFGQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TA = +25 C 13m @ VGS = -10V -10.3A Density End Products -40V 18m @ VGS = -4.5V -8.8A Occupies 33% of the Board

 0.36. Size:189K  diodes
 dmp4015sss.pdf

DMP4015SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Input Capacitance TA = 25 C Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) 11m @ VGS = -10V -10.1A -40V Qualified to AEC-Q101 Standards for High Rel

 0.37. Size:254K  diodes
 dmp4025lk3.pdf

DMP4025LK3 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max BVDSS RDS(on) max TA = +25 C Fast Switching Speed (Note 6) Low Input/Output Leakage 25m @ VGS = -10V -8.6A Lead-Free Finish; RoHS compliant (Note 1 & 2) -40V 45m @ VGS = -4.5V -7.0A Halogen and Antimony Free. Green Device (Note 3) Quali

 0.38. Size:624K  diodes
 dmp4047sk3.pdf

DMP4047SK3 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Low On-resistance TC = +25 C Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 45m @ VGS = -10V -20A -40V Halogen and Antimony Free. Green Device (Note 3) 55m @ VG

 0.39. Size:671K  diodes
 dmp4050sss.pdf

A Product Line of Diodes Incorporated DMP4050SSS 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 50m @ VGS= -10V -6.0A Qualified to AEC-Q101 Standards for High Reliability -40V 79m @ VGS= -4.5V -4.7A Me

 0.40. Size:470K  diodes
 dmp4065s.pdf

DMP4065S 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = 25 C Low Input Capacitance Fast Switching Speed -3.4A 80m @ VGS = -10V Low Input/Output Leakage -40V 100m @ VGS = -4.5V -3.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimon

 0.41. Size:537K  russia
 mp39b mp40a mp41a.pdf

 0.42. Size:207K  temic
 smp40n10.pdf

 0.43. Size:1482K  cn vbsemi
 dmp4015sssq.pdf

DMP4015SSSQ www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD

 0.44. Size:850K  cn vbsemi
 dmp4025lsd.pdf

DMP4025LSD www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.021 at VGS = - 10 V - 9.5 100 % UIS Tested RoHS - 30 15 nC COMPLIANT 0.028 at VGS = - 4.5 V - 8.0 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S1 S2 - Game Stations S1 1 D1 8

 0.45. Size:576K  cn minos
 mp40n20.pdf

200V N-Channel MOSFET Description MP40N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications Schematic diagram FEATURES Proprietary New Planar Technology

 0.46. Size:266K  inchange semiconductor
 dmp4015sk3.pdf

isc P-Channel MOSFET Transistor DMP4015SK3 FEATURES Drain Current I = -35A@ T =25 D C Drain Source Voltage- V = -40V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 0.47. Size:266K  inchange semiconductor
 dmp4051lk3.pdf

isc P-Channel MOSFET Transistor DMP4051LK3 FEATURES Drain Current I = -10.5A@ T =25 D C Drain Source Voltage- V = -40V(Min) DSS Static Drain-Source On-Resistance R = 51m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 0.48. Size:266K  inchange semiconductor
 dmp4025lk3.pdf

isc P-Channel MOSFET Transistor DMP4025LK3 FEATURES Drain Current I = -8.6A@ T =25 D C Drain Source Voltage- V = -40V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p