Справочник транзисторов. MP40

 

Биполярный транзистор MP40 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MP40
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.15 A
   Предельная температура PN-перехода (Tj): 85 °C
   Граничная частота коэффициента передачи тока (ft): 1 MHz
   Статический коэффициент передачи тока (hfe): 20

 Аналоги (замена) для MP40

 

 

MP40 Datasheet (PDF)

 0.1. Size:359K  1
dmp4015sps-13.pdf

MP40 MP40

DMP4015SPSGreen40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test In Production ID V(BR)DSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 11m @ VGS = -10V -17A -40V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 15m @ VGS = -4.5V -14.5A Halogen and

 0.2. Size:1039K  1
cmp40p03.pdf

MP40 MP40

CMP40P03P-Ch -30V Fast Switching MOSFETsGeneral Description Product SummeryThe CMP40P03 is a P-channel Power BVDSS RDSON ID MOSFET. It has specifically been designed to minimize input capacitance -30V 14m -40Aand gate charge. The device is therefore suitable in advanced Applications high-efficiency switching applications. LED POWER CONTROLLER DC-DC & DC-AC CONVERTERS

 0.3. Size:159K  toshiba
mp4006.pdf

MP40 MP40

MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4006 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : I = 2 A (max) C (DC)

 0.4. Size:185K  toshiba
mp4005.pdf

MP40 MP40

MP4005 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4005 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T

 0.5. Size:127K  toshiba
mp4020.pdf

MP40 MP40

MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4020 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T

 0.6. Size:177K  toshiba
mp4015 .pdf

MP40 MP40

MP4015 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors in One) MP4015 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)

 0.7. Size:130K  toshiba
mp4015.pdf

MP40 MP40

MP4015 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4015 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive. Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T

 0.8. Size:227K  toshiba
mp4005 .pdf

MP40 MP40

MP4005 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4005 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C

 0.9. Size:134K  toshiba
mp4009.pdf

MP40 MP40

MP4009 TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Darlington power transistor 4 in 1) MP4009 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive. Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T

 0.10. Size:104K  toshiba
mp4024.pdf

MP40 MP40

MP4024 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4024 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) Built-in resistance (R ). B Surge voltage is clamped by zener diode (C-B).

 0.11. Size:126K  toshiba
mp4013.pdf

MP40 MP40

MP4013 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4013 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T

 0.12. Size:157K  toshiba
mp4025 .pdf

MP40 MP40

MP4025 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4025 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B).

 0.13. Size:127K  toshiba
mp4021.pdf

MP40 MP40

MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4021 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T

 0.14. Size:85K  toshiba
mp4025.pdf

MP40 MP40

MP4025 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) MP4025 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pin) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B). Low

 0.15. Size:167K  toshiba
mp4013 .pdf

MP40 MP40

MP4013 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors 4 in One) MP4013 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)

 0.16. Size:152K  toshiba
mp4024 .pdf

MP40 MP40

MP4024 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Four Darlington Power Transistors in One) MP4024 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B).

 0.17. Size:217K  toshiba
mp4006 .pdf

MP40 MP40

MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4006 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : IC (DC) = 2 A (m

 0.18. Size:174K  toshiba
mp4009 .pdf

MP40 MP40

MP4009 TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One) MP4009 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)

 0.19. Size:165K  toshiba
mp4021 .pdf

MP40 MP40

MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4021 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)

 0.20. Size:166K  toshiba
mp4020 .pdf

MP40 MP40

MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Fourd Darlington Power tTransistors in One) MP4020 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)

 0.21. Size:363K  diodes
dmp4015spsq.pdf

MP40 MP40

DMP4015SPSQGreen40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test In Production ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 11m @ VGS = -10V -17.0A Halogen and Antimony Free. Green Device

 0.22. Size:281K  diodes
dmp4047ssd.pdf

MP40 MP40

DMP4047SSD40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistance TA = +25C Fast switching speed 45m @ VGS = -10V -6.5A -40V Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 55m @ VGS = -4.5V -5.9A Halogen and Antimony Free. Gre

 0.23. Size:270K  diodes
dmp4015sssq.pdf

MP40 MP40

DMP4015SSSQP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Input Capacitance TA = +25C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 11m @ VGS = -10V -10.1A Halogen and Antimony Free. Green Device (Note 3) -40V Qualified to

 0.24. Size:202K  diodes
dmp4015sps.pdf

MP40 MP40

DMP4015SPSGreen40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low on-resistance TA = 25C Fast switching speed 11m @ VGS = -10V -17.0A " Green component and RoHS compliant (Note 1) -40V Qualified to AEC-Q101 Standards for Hig

 0.25. Size:286K  diodes
dmp4025lsd.pdf

MP40 MP40

A Product Line ofDiodes IncorporatedDMP4025LSD40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max (A) Low RDS(on) Minimizes conduction losses V(BR)DSS RDS(on) max TA = +25C Fast switching speed Minimizes switching losses 25m @ VGS = -10V -7.6 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -40V 45m @

 0.26. Size:224K  diodes
dmp4015sk3.pdf

MP40 MP40

DMP4015SK3P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low on-resistance TA = 25C Fast switching speed 11m @ VGS = -10V -14.0A Green component and RoHS compliant (Note 1) -40V Qualified to AEC-Q101 Standards for High Reliability 15m

 0.27. Size:236K  diodes
dmp4047lfde.pdf

MP40 MP40

DMP4047LFDE40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max Package PCB footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 33m @ VGS = -10V -6A U-DFN2020-6 Low On-Resistance -40V Type E 50m @ VGS = -4.5V -4.9A Totally Lead-Free & Fully RoHS Com

 0.28. Size:263K  diodes
dmp4025sfg.pdf

MP40 MP40

A Product Line ofDiodes IncorporatedDMP4025SFG40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(on) Minimizes conduction losses V(BR)DSS RDS(on) max TA = +25C Fast switching speed Minimizes switching losses (Notes 6) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 25m @ VGS = -10V - 7.2A -40V Hal

 0.29. Size:314K  diodes
dmp4015sk3q.pdf

MP40 MP40

Green DMP4015SK3QP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(on) max TC = +25C Low on-resistance 11m @ VGS = -10V -35A Fast switching speed -40V 15m @ VGS = -4.5V -30A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

 0.30. Size:516K  diodes
dmp4013lfg.pdf

MP40 MP40

DMP4013LFG 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized. ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25C 13m @ VGS = -10V -10.3A density end products. -40V 18m @ VGS = -4.5V -8.8A Occupies 33% of the board area

 0.31. Size:668K  diodes
dmp4051lk3.pdf

MP40 MP40

A Product Line ofDiodes IncorporatedGreenDMP4051LK340V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 51m @ VGS= -10V -10.5A Qualified to AEC-Q101 Standards for High Reliability -40V 85m @ VGS= -4.5V -8.4

 0.32. Size:701K  diodes
dmp4050ssd.pdf

MP40 MP40

A Product Line ofDiodes IncorporatedDMP4050SSD 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID Fast switching speed V(BR)DSS RDS(on) Max TA = 25C Lead-Free, RoHS Compliant (Note 1) (Notes 4 & 6) Halogen and Antimony Free, Green Device (Note 1) 50m @ VGS = -10V -5.2A Qualified to

 0.33. Size:437K  diodes
dmp4065sq.pdf

MP40 MP40

DMP4065SQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed -3.4A 80m @ VGS = -10V Low Input/Output Leakage -40V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100m @ VGS = -4.5V -3.0A Halogen and Antimony F

 0.34. Size:187K  diodes
dmp4025lss.pdf

MP40 MP40

A Product Line ofDiodes IncorporatedDMP4025LSS 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(on) Minimizes conduction losses ID max (A) Fast switching speed Minimizes switching losses V(BR)DSS RDS(on) max TA = 25C Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) (Notes 6) Halogen and Antimony Free. Gr

 0.35. Size:603K  diodes
dmp4013lfgq.pdf

MP40 MP40

DMP4013LFGQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TA = +25C 13m @ VGS = -10V -10.3A Density End Products -40V 18m @ VGS = -4.5V -8.8A Occupies 33% of the Board

 0.36. Size:189K  diodes
dmp4015sss.pdf

MP40 MP40

DMP4015SSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Input Capacitance TA = 25C Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) 11m @ VGS = -10V -10.1A -40V Qualified to AEC-Q101 Standards for High Rel

 0.37. Size:254K  diodes
dmp4025lk3.pdf

MP40 MP40

DMP4025LK340V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max BVDSS RDS(on) max TA = +25C Fast Switching Speed (Note 6) Low Input/Output Leakage 25m @ VGS = -10V -8.6A Lead-Free Finish; RoHS compliant (Note 1 & 2) -40V 45m @ VGS = -4.5V -7.0A Halogen and Antimony Free. Green Device (Note 3) Quali

 0.38. Size:624K  diodes
dmp4047sk3.pdf

MP40 MP40

DMP4047SK3 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Low On-resistance TC = +25C Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 45m @ VGS = -10V -20A -40V Halogen and Antimony Free. Green Device (Note 3) 55m @ VG

 0.39. Size:671K  diodes
dmp4050sss.pdf

MP40 MP40

A Product Line ofDiodes IncorporatedDMP4050SSS 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 50m @ VGS= -10V -6.0A Qualified to AEC-Q101 Standards for High Reliability -40V 79m @ VGS= -4.5V -4.7A Me

 0.40. Size:470K  diodes
dmp4065s.pdf

MP40 MP40

DMP4065S 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = 25C Low Input Capacitance Fast Switching Speed -3.4A 80m @ VGS = -10V Low Input/Output Leakage -40V 100m @ VGS = -4.5V -3.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimon

 0.41. Size:537K  russia
mp39b mp40a mp41a.pdf

MP40

 0.42. Size:207K  temic
smp40n10.pdf

MP40 MP40

 0.43. Size:1482K  cn vbsemi
dmp4015sssq.pdf

MP40 MP40

DMP4015SSSQwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

 0.44. Size:850K  cn vbsemi
dmp4025lsd.pdf

MP40 MP40

DMP4025LSDwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18

 0.45. Size:266K  inchange semiconductor
dmp4015sk3.pdf

MP40 MP40

isc P-Channel MOSFET Transistor DMP4015SK3FEATURESDrain Current I = -35A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R = 11m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 0.46. Size:266K  inchange semiconductor
dmp4051lk3.pdf

MP40 MP40

isc P-Channel MOSFET Transistor DMP4051LK3FEATURESDrain Current I = -10.5A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R = 51m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 0.47. Size:266K  inchange semiconductor
dmp4025lk3.pdf

MP40 MP40

isc P-Channel MOSFET Transistor DMP4025LK3FEATURESDrain Current I = -8.6A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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