2N45 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N45
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 45 V
Tensión emisor-base (Veb): 15 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 0.1 MHz
Capacitancia de salida (Cc): 80 pF
Ganancia de corriente contínua (hfe): 12
Empaquetado / Estuche: U10
Búsqueda de reemplazo de transistor bipolar 2N45
2N45 Datasheet (PDF)
1.1. 2n373 2n374 2n456 2n457 2n497 2n544 2n561 2n578 2n579 2n580.pdf 
Size:317K _rca
1.2. 2n45.pdf Size:310K _general_electric
1.3. mtp2n45.pdf Size:157K _fairchild_semi
1.4. ixth12n45 ixth12n45a ixth12n50 ixtm12n45 ixtm12n45a ixtm12n50.pdf Size:65K _ixys
1.5. ixtf02n450.pdf Size:154K _ixys
Advance Technical Information High Voltage VDSS = 4500V IXTF02N450 Power MOSFET ID25 = 200mA ≤ Ω RDS(on) ≤ Ω ≤ 750Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings 1 2 Isolated Tab VDSS TJ = 25°C to 150°C 4500 V 5 VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4500 V VGSS Continuous ±20 V 1 = Ga
1.6. ixtl2n450.pdf Size:132K _ixys
Advance Technical Information High Voltage VDSS = 4500V IXTL2N450 Power MOSFET ID25 = 2A ≤ Ω RDS(on) ≤ Ω ≤ 23Ω ≤ Ω ≤ Ω D D D D O D O (Electrically Isolated Tab) RGi w G O w ISOPLUS i5-PakTM N-Channel Enhancement Mode O S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 4500 V S Isolated Tab VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4500 V
1.7. ixth02n450hv.pdf Size:208K _ixys
High Voltage VDSS = 4500V IXTT02N450HV Power MOSFET ID25 = 200mA IXTH02N450HV RDS(on) 625 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient
1.8. ixta02n450hv ixtt02n450hv.pdf Size:201K _ixys
Advance Technical Information High Voltage VDSS = 4500V IXTA02N450HV Power MOSFETs ID25 = 200mA IXTT02N450HV ≤ Ω RDS(on) ≤ Ω ≤ 750Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4500 V TO-268 (IXTT) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4500 V VGSS Continuous ±20 V G VGSM Trans
1.9. 12n45.pdf Size:221K _inchange_semiconductor
isc N-Channel MOSFET Transistor 12N45 ·FEATURES ·Drain Current I = 12A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.5Ω(Max) DS(on) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch mode power supply ·DC-DC converters ·AC motor control ·ABSOL
1.10. 12n45a.pdf Size:210K _inchange_semiconductor
isc N-Channel MOSFET Transistor 12N45A ·FEATURES ·Drain Current I = 12A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch mode power supply ·DC-DC converters ·AC motor control ·ABSO
1.11. 2n4576.pdf Size:182K _inchange_semiconductor
isc Silicon NPN Power Transistor 2N4576 DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular JEDEC TO-3 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL P
Otros transistores... 2N446 , 2N446A , 2N447 , 2N447A , 2N447B , 2N448 , 2N449 , 2N44A , 2N3563 , 2N450 , 2N451 , 2N452 , 2N453 , 2N454 , 2N456 , 2N456A , 2N456B .
