2N45 Todos los transistores

 ..1. Size:310K  general electric
 2n45.pdf

 0.1. Size:317K  rca
 2n373 2n374 2n456 2n457 2n497 2n544 2n561 2n578 2n579 2n580.pdf

 0.2. Size:681K  1
 ixth12n45ma ixth12n45mb ixth12n50ma ixth12n50mb ixth15n35ma ixth15n35mb ixth15n40ma ixth15n40mb ixtz42n20mb ixtz67n10ma ixtz67n10mb.pdf

 0.3. Size:157K  fairchild semi
 mtp2n45.pdf

 0.4. Size:201K  ixys
 ixta02n450hv ixtt02n450hv.pdf

Advance Technical Information High Voltage VDSS = 4500V IXTA02N450HV Power MOSFETs ID25 = 200mA IXTT02N450HV RDS(on) 750 N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4500 V TO-268 (IXTT) VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V G VGSM Trans

 0.5. Size:132K  ixys
 ixtl2n450.pdf

Advance Technical Information High Voltage VDSS = 4500V IXTL2N450 Power MOSFET ID25 = 2A RDS(on) 23 D D D D O D O (Electrically Isolated Tab) RGi w G O w ISOPLUS i5-PakTM N-Channel Enhancement Mode O S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 4500 V S Isolated Tab VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V

 0.6. Size:65K  ixys
 ixth12n45 ixth12n45a ixth12n50 ixtm12n45 ixtm12n45a ixtm12n50.pdf

 0.7. Size:208K  ixys
 ixth02n450hv.pdf

High Voltage VDSS = 4500V IXTT02N450HV Power MOSFET ID25 = 200mA IXTH02N450HV RDS(on) 625 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4500 V VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient

 0.8. Size:154K  ixys
 ixtf02n450.pdf

Advance Technical Information High Voltage VDSS = 4500V IXTF02N450 Power MOSFET ID25 = 200mA RDS(on) 750 (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings 1 2 Isolated Tab VDSS TJ = 25 C to 150 C 4500 V 5 VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V 1 = Ga

 0.9. Size:449K  way-on
 wm02n45m.pdf

WM02N45M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 4.5A DS D R

 0.10. Size:221K  inchange semiconductor
 12n45.pdf

isc N-Channel MOSFET Transistor 12N45 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch mode power supply DC-DC converters AC motor control ABSOL

 0.11. Size:210K  inchange semiconductor
 12n45a.pdf

isc N-Channel MOSFET Transistor 12N45A FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch mode power supply DC-DC converters AC motor control ABSO

 0.12. Size:182K  inchange semiconductor
 2n4576.pdf

isc Silicon NPN Power Transistor 2N4576 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P