2N45
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N45
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 45
V
Tensión emisor-base (Veb): 15
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 85
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.1
MHz
Capacitancia de salida (Cc): 80
pF
Ganancia de corriente contínua (hfe): 12
Paquete / Cubierta: U10
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2N45
Datasheet (PDF)
..1. Size:310K general electric
2n45.pdf 
0.4. Size:201K ixys
ixta02n450hv ixtt02n450hv.pdf
Advance Technical InformationHigh Voltage VDSS = 4500VIXTA02N450HVPower MOSFETsID25 = 200mAIXTT02N450HV RDS(on) 750 N-Channel Enhancement ModeTO-263 (IXTA)GS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4500 VTO-268 (IXTT)VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VGVGSM Trans
0.5. Size:132K ixys
ixtl2n450.pdf
Advance Technical InformationHigh Voltage VDSS = 4500VIXTL2N450Power MOSFET ID25 = 2A RDS(on) 23 DDDDO DO(Electrically Isolated Tab)RGiwG O wISOPLUS i5-PakTMN-Channel Enhancement ModeOSSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 4500 VSIsolated TabVDGR TJ = 25C to 150C, RGS = 1M 4500 V
0.7. Size:208K ixys
ixth02n450hv.pdf
High Voltage VDSS = 4500VIXTT02N450HVPower MOSFETID25 = 200mAIXTH02N450HV RDS(on) 625 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4500 VVDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VVGSM Transient
0.8. Size:154K ixys
ixtf02n450.pdf
Advance Technical InformationHigh Voltage VDSS = 4500VIXTF02N450Power MOSFETID25 = 200mA RDS(on) 750 (Electrically Isolated Tab)ISOPLUS i4-PakTMN-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings12Isolated TabVDSS TJ = 25C to 150C 4500 V5VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 V1 = Ga
0.9. Size:449K way-on
wm02n45m.pdf
WM02N45M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 4.5A DS DR
0.10. Size:221K inchange semiconductor
12n45.pdf
isc N-Channel MOSFET Transistor 12N45FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch mode power supplyDC-DC convertersAC motor controlABSOL
0.11. Size:210K inchange semiconductor
12n45a.pdf
isc N-Channel MOSFET Transistor 12N45AFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch mode power supplyDC-DC convertersAC motor controlABSO
0.12. Size:182K inchange semiconductor
2n4576.pdf
isc Silicon NPN Power Transistor 2N4576DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Otros transistores... 2N446
, 2N446A
, 2N447
, 2N447A
, 2N447B
, 2N448
, 2N449
, 2N44A
, 2SD1555
, 2N450
, 2N451
, 2N452
, 2N453
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, 2N456
, 2N456A
, 2N456B
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