2N45. Аналоги и основные параметры
Наименование производителя: 2N45
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 15 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 85 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.1 MHz
Ёмкость коллекторного перехода (Cc): 80 pf
Статический коэффициент передачи тока (hFE): 12
Корпус транзистора: U10
Аналоги (замена) для 2N45
- подборⓘ биполярного транзистора по параметрам
2N45 даташит
..1. Size:310K general electric
2n45.pdf 
0.4. Size:201K ixys
ixta02n450hv ixtt02n450hv.pdf 
Advance Technical Information High Voltage VDSS = 4500V IXTA02N450HV Power MOSFETs ID25 = 200mA IXTT02N450HV RDS(on) 750 N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4500 V TO-268 (IXTT) VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V G VGSM Trans
0.5. Size:132K ixys
ixtl2n450.pdf 
Advance Technical Information High Voltage VDSS = 4500V IXTL2N450 Power MOSFET ID25 = 2A RDS(on) 23 D D D D O D O (Electrically Isolated Tab) RGi w G O w ISOPLUS i5-PakTM N-Channel Enhancement Mode O S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 4500 V S Isolated Tab VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V
0.7. Size:208K ixys
ixth02n450hv.pdf 
High Voltage VDSS = 4500V IXTT02N450HV Power MOSFET ID25 = 200mA IXTH02N450HV RDS(on) 625 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4500 V VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient
0.8. Size:154K ixys
ixtf02n450.pdf 
Advance Technical Information High Voltage VDSS = 4500V IXTF02N450 Power MOSFET ID25 = 200mA RDS(on) 750 (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings 1 2 Isolated Tab VDSS TJ = 25 C to 150 C 4500 V 5 VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V 1 = Ga
0.9. Size:449K way-on
wm02n45m.pdf 
WM02N45M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 4.5A DS D R
0.10. Size:221K inchange semiconductor
12n45.pdf 
isc N-Channel MOSFET Transistor 12N45 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch mode power supply DC-DC converters AC motor control ABSOL
0.11. Size:210K inchange semiconductor
12n45a.pdf 
isc N-Channel MOSFET Transistor 12N45A FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch mode power supply DC-DC converters AC motor control ABSO
0.12. Size:182K inchange semiconductor
2n4576.pdf 
isc Silicon NPN Power Transistor 2N4576 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
Другие транзисторы: 2N446, 2N446A, 2N447, 2N447A, 2N447B, 2N448, 2N449, 2N44A, S9018, 2N450, 2N451, 2N452, 2N453, 2N454, 2N456, 2N456A, 2N456B
