Биполярный транзистор 2N45
Даташит. Аналоги
Наименование производителя: 2N45
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 45
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 15
V
Макcимальный постоянный ток коллектора (Ic): 0.05
A
Предельная температура PN-перехода (Tj): 85
°C
Граничная частота коэффициента передачи тока (ft): 0.1
MHz
Ёмкость коллекторного перехода (Cc): 80
pf
Статический коэффициент передачи тока (hfe): 12
Корпус транзистора: U10
- подбор биполярного транзистора по параметрам
2N45
Datasheet (PDF)
..1. Size:310K general electric
2n45.pdf 
0.4. Size:201K ixys
ixta02n450hv ixtt02n450hv.pdf 
Advance Technical InformationHigh Voltage VDSS = 4500VIXTA02N450HVPower MOSFETsID25 = 200mAIXTT02N450HV RDS(on) 750 N-Channel Enhancement ModeTO-263 (IXTA)GS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4500 VTO-268 (IXTT)VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VGVGSM Trans
0.5. Size:132K ixys
ixtl2n450.pdf 
Advance Technical InformationHigh Voltage VDSS = 4500VIXTL2N450Power MOSFET ID25 = 2A RDS(on) 23 DDDDO DO(Electrically Isolated Tab)RGiwG O wISOPLUS i5-PakTMN-Channel Enhancement ModeOSSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 4500 VSIsolated TabVDGR TJ = 25C to 150C, RGS = 1M 4500 V
0.7. Size:208K ixys
ixth02n450hv.pdf 
High Voltage VDSS = 4500VIXTT02N450HVPower MOSFETID25 = 200mAIXTH02N450HV RDS(on) 625 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4500 VVDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VVGSM Transient
0.8. Size:154K ixys
ixtf02n450.pdf 
Advance Technical InformationHigh Voltage VDSS = 4500VIXTF02N450Power MOSFETID25 = 200mA RDS(on) 750 (Electrically Isolated Tab)ISOPLUS i4-PakTMN-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings12Isolated TabVDSS TJ = 25C to 150C 4500 V5VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 V1 = Ga
0.9. Size:449K way-on
wm02n45m.pdf 
WM02N45M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 4.5A DS DR
0.10. Size:221K inchange semiconductor
12n45.pdf 
isc N-Channel MOSFET Transistor 12N45FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch mode power supplyDC-DC convertersAC motor controlABSOL
0.11. Size:210K inchange semiconductor
12n45a.pdf 
isc N-Channel MOSFET Transistor 12N45AFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch mode power supplyDC-DC convertersAC motor controlABSO
0.12. Size:182K inchange semiconductor
2n4576.pdf 
isc Silicon NPN Power Transistor 2N4576DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Другие транзисторы... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
History: 2SA1286
| 2N5410
| 2N4911
| 2N5760
| 2SA1310
