2N45 Specs and Replacement
Type Designator: 2N45
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 0.1 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: U10
- BJT ⓘ Cross-Reference Search
2N45 datasheet
0.4. Size:201K ixys
ixta02n450hv ixtt02n450hv.pdf 
Advance Technical Information High Voltage VDSS = 4500V IXTA02N450HV Power MOSFETs ID25 = 200mA IXTT02N450HV RDS(on) 750 N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4500 V TO-268 (IXTT) VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V G VGSM Trans... See More ⇒
0.5. Size:132K ixys
ixtl2n450.pdf
Advance Technical Information High Voltage VDSS = 4500V IXTL2N450 Power MOSFET ID25 = 2A RDS(on) 23 D D D D O D O (Electrically Isolated Tab) RGi w G O w ISOPLUS i5-PakTM N-Channel Enhancement Mode O S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 4500 V S Isolated Tab VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V... See More ⇒
0.7. Size:208K ixys
ixth02n450hv.pdf
High Voltage VDSS = 4500V IXTT02N450HV Power MOSFET ID25 = 200mA IXTH02N450HV RDS(on) 625 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4500 V VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient ... See More ⇒
0.8. Size:154K ixys
ixtf02n450.pdf
Advance Technical Information High Voltage VDSS = 4500V IXTF02N450 Power MOSFET ID25 = 200mA RDS(on) 750 (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings 1 2 Isolated Tab VDSS TJ = 25 C to 150 C 4500 V 5 VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V 1 = Ga... See More ⇒
0.9. Size:449K way-on
wm02n45m.pdf
WM02N45M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 4.5A DS D R ... See More ⇒
0.10. Size:221K inchange semiconductor
12n45.pdf
isc N-Channel MOSFET Transistor 12N45 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch mode power supply DC-DC converters AC motor control ABSOL... See More ⇒
0.11. Size:210K inchange semiconductor
12n45a.pdf
isc N-Channel MOSFET Transistor 12N45A FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch mode power supply DC-DC converters AC motor control ABSO... See More ⇒
0.12. Size:182K inchange semiconductor
2n4576.pdf
isc Silicon NPN Power Transistor 2N4576 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Detailed specifications: 2N446, 2N446A, 2N447, 2N447A, 2N447B, 2N448, 2N449, 2N44A, S9018, 2N450, 2N451, 2N452, 2N453, 2N454, 2N456, 2N456A, 2N456B
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