2N45 Datasheet and Replacement

   Type Designator: 2N45
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 0.1 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: U10

2N45 Substitution

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2N45 Datasheet (PDF)

..1. Size:310K general electric
2n45.pdf pdf_icon

0.1. Size:317K rca
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0.2. Size:681K 1
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0.3. Size:157K fairchild semi
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0.4. Size:201K ixys
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Advance Technical InformationHigh Voltage VDSS = 4500VIXTA02N450HVPower MOSFETsID25 = 200mAIXTT02N450HV RDS(on) 750 N-Channel Enhancement ModeTO-263 (IXTA)GS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4500 VTO-268 (IXTT)VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VGVGSM Trans

0.5. Size:132K ixys
ixtl2n450.pdf pdf_icon

Advance Technical InformationHigh Voltage VDSS = 4500VIXTL2N450Power MOSFET ID25 = 2A RDS(on) 23 DDDDO DO(Electrically Isolated Tab)RGiwG O wISOPLUS i5-PakTMN-Channel Enhancement ModeOSSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 4500 VSIsolated TabVDGR TJ = 25C to 150C, RGS = 1M 4500 V

0.6. Size:65K ixys
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0.7. Size:208K ixys
ixth02n450hv.pdf pdf_icon

High Voltage VDSS = 4500VIXTT02N450HVPower MOSFETID25 = 200mAIXTH02N450HV RDS(on) 625 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4500 VVDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VVGSM Transient

0.8. Size:154K ixys
ixtf02n450.pdf pdf_icon

Advance Technical InformationHigh Voltage VDSS = 4500VIXTF02N450Power MOSFETID25 = 200mA RDS(on) 750 (Electrically Isolated Tab)ISOPLUS i4-PakTMN-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings12Isolated TabVDSS TJ = 25C to 150C 4500 V5VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 V1 = Ga

0.9. Size:449K way-on
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WM02N45M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 4.5A DS DR

0.10. Size:221K inchange semiconductor
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isc N-Channel MOSFET Transistor 12N45FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch mode power supplyDC-DC convertersAC motor controlABSOL

0.11. Size:210K inchange semiconductor
12n45a.pdf pdf_icon

isc N-Channel MOSFET Transistor 12N45AFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch mode power supplyDC-DC convertersAC motor controlABSO

0.12. Size:182K inchange semiconductor
2n4576.pdf pdf_icon

isc Silicon NPN Power Transistor 2N4576DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .