2N450 Todos los transistores

 

2N450 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N450

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.125 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: TO5

Búsqueda de reemplazo de transistor bipolar 2N450

 

2N450 Datasheet (PDF)

1.1. ixtf02n450.pdf Size:154K _ixys

2N450
2N450

Advance Technical Information High Voltage VDSS = 4500V IXTF02N450 Power MOSFET ID25 = 200mA ≤ Ω RDS(on) ≤ Ω ≤ 750Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings 1 2 Isolated Tab VDSS TJ = 25°C to 150°C 4500 V 5 VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4500 V VGSS Continuous ±20 V 1 = Ga

1.2. ixtl2n450.pdf Size:132K _ixys

2N450
2N450

Advance Technical Information High Voltage VDSS = 4500V IXTL2N450 Power MOSFET ID25 = 2A ≤ Ω RDS(on) ≤ Ω ≤ 23Ω ≤ Ω ≤ Ω D D D D O D O (Electrically Isolated Tab) RGi w G O w ISOPLUS i5-PakTM N-Channel Enhancement Mode O S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 4500 V S Isolated Tab VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4500 V

 1.3. ixth02n450hv.pdf Size:208K _ixys

2N450
2N450

High Voltage VDSS = 4500V IXTT02N450HV Power MOSFET ID25 = 200mA IXTH02N450HV   RDS(on)    625     TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient

1.4. ixta02n450hv ixtt02n450hv.pdf Size:201K _ixys

2N450
2N450

Advance Technical Information High Voltage VDSS = 4500V IXTA02N450HV Power MOSFETs ID25 = 200mA IXTT02N450HV ≤ Ω RDS(on) ≤ Ω ≤ 750Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4500 V TO-268 (IXTT) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4500 V VGSS Continuous ±20 V G VGSM Trans

Otros transistores... 2N446A , 2N447 , 2N447A , 2N447B , 2N448 , 2N449 , 2N44A , 2N45 , BU508A , 2N451 , 2N452 , 2N453 , 2N454 , 2N456 , 2N456A , 2N456B , 2N457 .

 

 
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