2N450 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N450
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.125 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 30
Empaquetado / Estuche: TO5
Búsqueda de reemplazo de transistor bipolar 2N450
2N450 Datasheet (PDF)
1.1. ixtf02n450.pdf 
Size:154K _ixys
Advance Technical Information High Voltage VDSS = 4500V IXTF02N450 Power MOSFET ID25 = 200mA ≤ Ω RDS(on) ≤ Ω ≤ 750Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings 1 2 Isolated Tab VDSS TJ = 25°C to 150°C 4500 V 5 VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4500 V VGSS Continuous ±20 V 1 = Ga
1.2. ixtl2n450.pdf Size:132K _ixys
Advance Technical Information High Voltage VDSS = 4500V IXTL2N450 Power MOSFET ID25 = 2A ≤ Ω RDS(on) ≤ Ω ≤ 23Ω ≤ Ω ≤ Ω D D D D O D O (Electrically Isolated Tab) RGi w G O w ISOPLUS i5-PakTM N-Channel Enhancement Mode O S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 4500 V S Isolated Tab VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4500 V
1.3. ixth02n450hv.pdf Size:208K _ixys
High Voltage VDSS = 4500V IXTT02N450HV Power MOSFET ID25 = 200mA IXTH02N450HV RDS(on) 625 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient
1.4. ixta02n450hv ixtt02n450hv.pdf Size:201K _ixys
Advance Technical Information High Voltage VDSS = 4500V IXTA02N450HV Power MOSFETs ID25 = 200mA IXTT02N450HV ≤ Ω RDS(on) ≤ Ω ≤ 750Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4500 V TO-268 (IXTT) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4500 V VGSS Continuous ±20 V G VGSM Trans
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
