MPSW01A Todos los transistores

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSW01/D One Watt High Current Transistors MPSW01 NPN Silicon * MPSW01A COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector Emitter Voltage VCEO Vdc 3 MPSW01 30 MPSW01A 40 CASE 29 05, STYLE 1 TO 92 (TO 226AE) Collector Base Voltage VCBO Vdc

MPSW01 NPN General Purpose Amplifier Features This device is designed for general purpose medium power amplifiers Sourced from process 37 Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A PD Tota

MPSW01, MPSW01A One Watt High Current Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 1 MPSW01 30 EMITTER MPSW01A 40 Collector-Base Voltage VCBO Vdc MPSW01 40 MPSW01A 50 Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 1000