MPSW01A Specs and Replacement
Type Designator: MPSW01A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO92
MPSW01A Substitution
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MPSW01A datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSW01/D One Watt High Current Transistors MPSW01 NPN Silicon * MPSW01A COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector Emitter Voltage VCEO Vdc 3 MPSW01 30 MPSW01A 40 CASE 29 05, STYLE 1 TO 92 (TO 226AE) Collector Base Voltage VCBO Vdc ... See More ⇒
MPSW01 NPN General Purpose Amplifier Features This device is designed for general purpose medium power amplifiers Sourced from process 37 Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A PD Tota... See More ⇒
MPSW01, MPSW01A One Watt High Current Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 1 MPSW01 30 EMITTER MPSW01A 40 Collector-Base Voltage VCBO Vdc MPSW01 40 MPSW01A 50 Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 1000... See More ⇒
Detailed specifications: MPSU51A , MPSU52 , MPSU55 , MPSU56 , MPSU57 , MPSU60 , MPSU95 , MPSW01 , A1941 , MPSW05 , MPSW06 , MPSW07 , MPSW10 , MPSW13 , MPSW14 , MPSW42 , MPSW43 .
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