MPSW01A Datasheet, Equivalent, Cross Reference Search
Type Designator: MPSW01A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92
MPSW01A Transistor Equivalent Substitute - Cross-Reference Search
MPSW01A Datasheet (PDF)
mpsw01rev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSW01/DOne Watt High Current TransistorsMPSW01NPN Silicon*MPSW01ACOLLECTOR3*Motorola Preferred Device2BASE1EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO Vdc 3MPSW01 30MPSW01A 40CASE 2905, STYLE 1TO92 (TO226AE)CollectorBase Voltage VCBO Vdc
mpsw01.pdf
MPSW01NPN General Purpose AmplifierFeatures This device is designed for general purpose medium power amplifiers Sourced from process 37 Absolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 1.0 APD Tota
mpsw01-a.pdf
MPSW01, MPSW01AOne Watt High CurrentTransistorsNPN SiliconFeatures http://onsemi.com Pb-Free Packages are Available*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1MPSW01 30EMITTERMPSW01A 40Collector-Base Voltage VCBO VdcMPSW01 40MPSW01A 50Emitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1000
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N1958A | BDX50-7 | MPQ2894
