MRF223 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF223

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 65 W

Tensión colector-base (Vcb): 36 V

Tensión colector-emisor (Vce): 18 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 85 pF

Ganancia de corriente contínua (hFE): 5

Encapsulados: M174

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MRF223 datasheet

 9.1. Size:82K  motorola
 mrf224.pdf pdf_icon

MRF223

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF224/D The RF Line NPN Silicon MRF224 RF Power Transistor . . . designed for 12.5 Volt VHF large signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 40 W 40 W, 175 MHz Power Gain = 4.5 dB M

 9.2. Size:82K  motorola
 mrf224re.pdf pdf_icon

MRF223

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF224/D The RF Line NPN Silicon MRF224 RF Power Transistor . . . designed for 12.5 Volt VHF large signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 40 W 40 W, 175 MHz Power Gain = 4.5 dB M

Otros transistores... MRF207, MRF208, MRF209, MRF212, MRF215, MRF216, MRF221, MRF222, 2SA1015, MRF224, MRF225, MRF226, MRF227, MRF229, MRF230, MRF231, MRF232