All Transistors. MRF223 Datasheet

 

MRF223 Datasheet and Replacement


   Type Designator: MRF223
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 85 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: M174
 

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MRF223 Datasheet (PDF)

 9.1. Size:82K  motorola
 mrf224.pdf pdf_icon

MRF223

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF224/DThe RF LineNPN SiliconMRF224RF Power Transistor. . . designed for 12.5 Volt VHF largesignal power amplifier applicationsrequired in commercial and industrial equipment operating to VHF frequencies. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 40 W40 W, 175 MHzPower Gain = 4.5 dB M

 9.2. Size:82K  motorola
 mrf224re.pdf pdf_icon

MRF223

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF224/DThe RF LineNPN SiliconMRF224RF Power Transistor. . . designed for 12.5 Volt VHF largesignal power amplifier applicationsrequired in commercial and industrial equipment operating to VHF frequencies. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 40 W40 W, 175 MHzPower Gain = 4.5 dB M

Datasheet: MRF207 , MRF208 , MRF209 , MRF212 , MRF215 , MRF216 , MRF221 , MRF222 , 2SC2240 , MRF224 , MRF225 , MRF226 , MRF227 , MRF229 , MRF230 , MRF231 , MRF232 .

History: UNR1218 | L9015QLT1G | MMBT5551 | DTS4025 | 2SC340 | IMT1AFRA | HQ1L2N

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