All Transistors. MRF223 Datasheet

 

MRF223 Datasheet and Replacement


   Type Designator: MRF223
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 85 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: M174
 

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MRF223 Datasheet (PDF)

 9.1. Size:82K  motorola
 mrf224.pdf pdf_icon

MRF223

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF224/DThe RF LineNPN SiliconMRF224RF Power Transistor. . . designed for 12.5 Volt VHF largesignal power amplifier applicationsrequired in commercial and industrial equipment operating to VHF frequencies. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 40 W40 W, 175 MHzPower Gain = 4.5 dB M

 9.2. Size:82K  motorola
 mrf224re.pdf pdf_icon

MRF223

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF224/DThe RF LineNPN SiliconMRF224RF Power Transistor. . . designed for 12.5 Volt VHF largesignal power amplifier applicationsrequired in commercial and industrial equipment operating to VHF frequencies. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 40 W40 W, 175 MHzPower Gain = 4.5 dB M

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA504Y | HA7516 | KSC184V | KRA722F | KC817-16 | MMBT5551 | SDT96304

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