MRF306 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MRF306
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 146 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 33 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Capacitancia de salida (Cc): 40 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO128

Búsqueda de reemplazo de transistor bipolar MRF306

MRF306 Datasheet (PDF)

9.1. Size:93K motorola
mrf3094r.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3094/DThe RF LineMRF3094Microwave LinearMRF3095Power TransistorsMRF3096Designed for Class A, common emitter linear power amplifiers. Specified 20 Volt, 1.6 GHz CharacteristicsOutput Power 0.5, 0.8, 1.6 WattsGain 9.012 dB9.012 dB1.551.65 GHz Low Parasitic Microwave Stripline Packag

9.2. Size:106K motorola
mrf3010.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3010/DThe RF MOSFET LineMRF3010RF PowerField Effect TransistorNChannel EnhancementMode Lateral10 W, 1.6 GHz, 28 VMOSFETLATERAL NCHANNELBROADBAND Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,RF POWER MOSFETCW amplifier applications.D Guaranteed Performance @

9.3. Size:106K motorola
mrf3010rev1.pdf

9.4. Size:65K motorola
mrf3094rev8.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3094/DThe RF LineMicrowave LinearMRF3094Power TransistorsMRF3095Designed for Class A, common emitter linear power amplifiers. Specified 20 Volt, 1.6 GHz CharacteristicsOutput Power 0.5, 0.8, 1.6 WattsGain 9.012 dB9.012 dB1.551.65 GHz Low Parasitic Microwave Stripline Package0.5

9.5. Size:93K motorola
mrf3094 mrf3095 mrf3096.pdf