MRF306 Todos los transistores

 

MRF306 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF306
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 146 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 33 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 40 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO128

 Búsqueda de reemplazo de transistor bipolar MRF306

 

MRF306 Datasheet (PDF)

 9.1. Size:93K  motorola
mrf3094r.pdf

MRF306
MRF306

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3094/DThe RF LineMRF3094Microwave LinearMRF3095Power TransistorsMRF3096Designed for Class A, common emitter linear power amplifiers. Specified 20 Volt, 1.6 GHz CharacteristicsOutput Power 0.5, 0.8, 1.6 WattsGain 9.012 dB9.012 dB1.551.65 GHz Low Parasitic Microwave Stripline Packag

 9.2. Size:106K  motorola
mrf3010.pdf

MRF306
MRF306

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3010/DThe RF MOSFET LineMRF3010RF PowerField Effect TransistorNChannel EnhancementMode Lateral10 W, 1.6 GHz, 28 VMOSFETLATERAL NCHANNELBROADBAND Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,RF POWER MOSFETCW amplifier applications.D Guaranteed Performance @

 9.3. Size:106K  motorola
mrf3010rev1.pdf

MRF306
MRF306

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3010/DThe RF MOSFET LineMRF3010RF PowerField Effect TransistorNChannel EnhancementMode Lateral10 W, 1.6 GHz, 28 VMOSFETLATERAL NCHANNELBROADBAND Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,RF POWER MOSFETCW amplifier applications.D Guaranteed Performance @

 9.4. Size:65K  motorola
mrf3094rev8.pdf

MRF306
MRF306

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3094/DThe RF LineMicrowave LinearMRF3094Power TransistorsMRF3095Designed for Class A, common emitter linear power amplifiers. Specified 20 Volt, 1.6 GHz CharacteristicsOutput Power 0.5, 0.8, 1.6 WattsGain 9.012 dB9.012 dB1.551.65 GHz Low Parasitic Microwave Stripline Package0.5

 9.5. Size:93K  motorola
mrf3094 mrf3095 mrf3096.pdf

MRF306
MRF306

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3094/DThe RF LineMRF3094Microwave LinearMRF3095Power TransistorsMRF3096Designed for Class A, common emitter linear power amplifiers. Specified 20 Volt, 1.6 GHz CharacteristicsOutput Power 0.5, 0.8, 1.6 WattsGain 9.012 dB9.012 dB1.551.65 GHz Low Parasitic Microwave Stripline Packag

 9.6. Size:65K  motorola
mrf3094 mrf3095.pdf

MRF306
MRF306

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3094/DThe RF LineMicrowave LinearMRF3094Power TransistorsMRF3095Designed for Class A, common emitter linear power amplifiers. Specified 20 Volt, 1.6 GHz CharacteristicsOutput Power 0.5, 0.8, 1.6 WattsGain 9.012 dB9.012 dB1.551.65 GHz Low Parasitic Microwave Stripline Package0.5

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
Back to Top

 


MRF306
  MRF306
  MRF306
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top