MRF306 Datasheet, Equivalent, Cross Reference Search

   Type Designator: MRF306
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 146 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 33 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO128

MRF306 Transistor Equivalent Substitute - Cross-Reference Search

MRF306 Datasheet (PDF)

9.1. Size:93K motorola
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3094/DThe RF LineMRF3094Microwave LinearMRF3095Power TransistorsMRF3096Designed for Class A, common emitter linear power amplifiers. Specified 20 Volt, 1.6 GHz CharacteristicsOutput Power 0.5, 0.8, 1.6 WattsGain 9.012 dB9.012 dB1.551.65 GHz Low Parasitic Microwave Stripline Packag

9.2. Size:106K motorola
mrf3010.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3010/DThe RF MOSFET LineMRF3010RF PowerField Effect TransistorNChannel EnhancementMode Lateral10 W, 1.6 GHz, 28 VMOSFETLATERAL NCHANNELBROADBAND Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,RF POWER MOSFETCW amplifier applications.D Guaranteed Performance @

9.3. Size:106K motorola
mrf3010rev1.pdf

9.4. Size:65K motorola
mrf3094rev8.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3094/DThe RF LineMicrowave LinearMRF3094Power TransistorsMRF3095Designed for Class A, common emitter linear power amplifiers. Specified 20 Volt, 1.6 GHz CharacteristicsOutput Power 0.5, 0.8, 1.6 WattsGain 9.012 dB9.012 dB1.551.65 GHz Low Parasitic Microwave Stripline Package0.5

9.5. Size:93K motorola
mrf3094 mrf3095 mrf3096.pdf