MRF331 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF331

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 27 W

Tensión colector-base (Vcb): 60 V

Corriente del colector DC máxima (Ic): 1.1 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: X54D

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MRF331 datasheet

 9.1. Size:132K  motorola
 mrf338rev2.pdf pdf_icon

MRF331

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF338/D The RF Line NPN Silicon RF Power Transistor MRF338 Designed primarily for wideband large signal output and driver amplifier stages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50% (Min) 80 W, 400 to 512 MHz CONTR

 9.2. Size:132K  motorola
 mrf338.pdf pdf_icon

MRF331

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF338/D The RF Line NPN Silicon RF Power Transistor MRF338 Designed primarily for wideband large signal output and driver amplifier stages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50% (Min) 80 W, 400 to 512 MHz CONTR

Otros transistores... MRF316, MRF317, MRF321, MRF323, MRF325, MRF326, MRF327, MRF328, C1815, MRF340, MRF342, MRF3866R2, MRF401, MRF402, MRF404, MRF406, MRF420