MRF331 Datasheet and Replacement
Type Designator: MRF331
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 27 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector Current |Ic max|: 1.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Noise Figure, dB: -
Package: X54D
MRF331 Substitution
MRF331 Datasheet (PDF)
mrf338rev2.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF338/DThe RF LineNPN Silicon RF Power TransistorMRF338Designed primarily for wideband largesignal output and driver amplifierstages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz CharacteristicsOutput Power = 80 WattsMinimum Gain = 7.3 dBEfficiency = 50% (Min) 80 W, 400 to 512 MHzCONTR
mrf338.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF338/DThe RF LineNPN Silicon RF Power TransistorMRF338Designed primarily for wideband largesignal output and driver amplifierstages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz CharacteristicsOutput Power = 80 WattsMinimum Gain = 7.3 dBEfficiency = 50% (Min) 80 W, 400 to 512 MHzCONTR
Datasheet: MRF316 , MRF317 , MRF321 , MRF323 , MRF325 , MRF326 , MRF327 , MRF328 , 2N2222 , MRF340 , MRF342 , MRF3866R2 , MRF401 , MRF402 , MRF404 , MRF406 , MRF420 .
History: MJE13005DQ4
Keywords - MRF331 transistor datasheet
MRF331 cross reference
MRF331 equivalent finder
MRF331 lookup
MRF331 substitution
MRF331 replacement
History: MJE13005DQ4



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