MRF331 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF331
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 27 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector Current |Ic max|: 1.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Noise Figure, dB: -
Package: X54D
MRF331 Transistor Equivalent Substitute - Cross-Reference Search
MRF331 Datasheet (PDF)
mrf338rev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF338/DThe RF LineNPN Silicon RF Power TransistorMRF338Designed primarily for wideband largesignal output and driver amplifierstages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz CharacteristicsOutput Power = 80 WattsMinimum Gain = 7.3 dBEfficiency = 50% (Min) 80 W, 400 to 512 MHzCONTR
mrf338.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF338/DThe RF LineNPN Silicon RF Power TransistorMRF338Designed primarily for wideband largesignal output and driver amplifierstages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz CharacteristicsOutput Power = 80 WattsMinimum Gain = 7.3 dBEfficiency = 50% (Min) 80 W, 400 to 512 MHzCONTR
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
