MRF454
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF454
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 250
W
Tensión colector-base (Vcb): 45
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 20
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: M174
Búsqueda de reemplazo de transistor bipolar MRF454
MRF454
Datasheet (PDF)
..1. Size:70K motorola
mrf454.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF454/DThe RF LineNPN SiliconMRF454RF Power TransistorDesigned for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 80 Watts80 W, 30 MHzMinimum Gain = 12 dBRF POWEREfficiency = 50%TRANSISTORNPN S
..2. Size:114K macom
mrf454.pdf
MRF454 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 80W, 30MHz, 12.5V Designed for power amplifier applications in industrial, commercial and Product Image amateur radio equipment to 30 MHz. Specified 12.5 V, 30 MHz characteristics Output power = 80 W Minimum gain = 12 dB Efficiency = 50% CASE 21111, STYLE 1 1 ADV
0.1. Size:70K motorola
mrf454re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF454/DThe RF LineNPN SiliconMRF454RF Power TransistorDesigned for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 80 Watts80 W, 30 MHzMinimum Gain = 12 dBRF POWEREfficiency = 50%TRANSISTORNPN S
0.2. Size:57K motorola
mrf454rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF454/DThe RF LineNPN SiliconMRF454RF Power TransistorDesigned for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 80 Watts80 W, 30 MHzMinimum Gain = 12 dBRF POWEREfficiency = 50%TRANSISTORNPN S
9.1. Size:75K motorola
mrf455re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF455/DThe RF LineNPN SiliconMRF455RF Power Transistor. . . designed for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 60 Watts60 W, 30 MHzMinimum Gain = 13 dBRF POWEREfficiency = 55%TRANSISTOR
9.2. Size:75K motorola
mrf455.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF455/DThe RF LineNPN SiliconMRF455RF Power Transistor. . . designed for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 60 Watts60 W, 30 MHzMinimum Gain = 13 dBRF POWEREfficiency = 55%TRANSISTOR
9.3. Size:135K macom
mrf455.pdf
MRF455 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 60W, 30MHz, 12.5V Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. Specified 12.5 V, 30 MHz characteristics Output power = 60 W Minimum gain = 13 dB Efficiency = 55% CASE 21107, STYLE 1 1 ADVAN
9.4. Size:447K hgsemi
mrf453a.pdf
HG RF POWER TRANSISTORMRF453ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORMRF453ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 19
9.5. Size:1290K hgsemi
mrf450a.pdf
HG RF POWER TRANSISTORMRF450ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORMRF450ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 19
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