MRF454 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF454
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: M174
MRF454 Transistor Equivalent Substitute - Cross-Reference Search
MRF454 Datasheet (PDF)
mrf454.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF454/DThe RF LineNPN SiliconMRF454RF Power TransistorDesigned for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 80 Watts80 W, 30 MHzMinimum Gain = 12 dBRF POWEREfficiency = 50%TRANSISTORNPN S
mrf454.pdf
MRF454 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 80W, 30MHz, 12.5V Designed for power amplifier applications in industrial, commercial and Product Image amateur radio equipment to 30 MHz. Specified 12.5 V, 30 MHz characteristics Output power = 80 W Minimum gain = 12 dB Efficiency = 50% CASE 21111, STYLE 1 1 ADV
mrf454re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF454/DThe RF LineNPN SiliconMRF454RF Power TransistorDesigned for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 80 Watts80 W, 30 MHzMinimum Gain = 12 dBRF POWEREfficiency = 50%TRANSISTORNPN S
mrf454rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF454/DThe RF LineNPN SiliconMRF454RF Power TransistorDesigned for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 80 Watts80 W, 30 MHzMinimum Gain = 12 dBRF POWEREfficiency = 50%TRANSISTORNPN S
mrf455re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF455/DThe RF LineNPN SiliconMRF455RF Power Transistor. . . designed for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 60 Watts60 W, 30 MHzMinimum Gain = 13 dBRF POWEREfficiency = 55%TRANSISTOR
mrf455.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF455/DThe RF LineNPN SiliconMRF455RF Power Transistor. . . designed for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 60 Watts60 W, 30 MHzMinimum Gain = 13 dBRF POWEREfficiency = 55%TRANSISTOR
mrf455.pdf
MRF455 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 60W, 30MHz, 12.5V Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. Specified 12.5 V, 30 MHz characteristics Output power = 60 W Minimum gain = 13 dB Efficiency = 55% CASE 21107, STYLE 1 1 ADVAN
mrf453a.pdf
HG RF POWER TRANSISTORMRF453ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORMRF453ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 19
mrf450a.pdf
HG RF POWER TRANSISTORMRF450ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORMRF450ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 19
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
