MRF501 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF501
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 600 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO72
Búsqueda de reemplazo de MRF501
MRF501 Datasheet (PDF)
mrf5015rev6d.pdf
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mrf5015.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5
mrf5015r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5
Otros transistores... MRF458 , MRF460 , MRF463 , MRF464 , MRF472 , MRF475 , MRF476 , MRF485 , 2SA1837 , MRF502 , MRF515 , MRF517 , MRF5174 , MRF5175 , MRF5176 , MRF5177 , MRF519 .
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History: MJF31CG | TN5129 | 2SC2883-Y | TN3705 | 2SD1342
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