MRF501 Datasheet. Specs and Replacement
Type Designator: MRF501
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO72
MRF501 Substitution
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MRF501 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
Detailed specifications: MRF458, MRF460, MRF463, MRF464, MRF472, MRF475, MRF476, MRF485, MJE340, MRF502, MRF515, MRF517, MRF5174, MRF5175, MRF5176, MRF5177, MRF519
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