MRF835 Todos los transistores

 

MRF835 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF835
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 36 V
   Tensión colector-emisor (Vce): 16 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO128

 Búsqueda de reemplazo de transistor bipolar MRF835

 

Principales características: MRF835

 9.1. Size:101K  motorola
mrf8372r1 mrf8372r2.pdf pdf_icon

MRF835

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS

 9.2. Size:181K  motorola
mrf837.pdf pdf_icon

MRF835

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)

 9.3. Size:181K  motorola
mrf837re.pdf pdf_icon

MRF835

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)

 9.4. Size:101K  motorola
mrf8372rev0.pdf pdf_icon

MRF835

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS

Otros transistores... MRF648 , MRF8003 , MRF8004 , MRF817 , MRF818 , MRF823 , MRF824 , MRF825 , TIP2955 , MRF840 , MRF842 , MRF844 , MRF846 , MRF901 , MRF9011LT1 , MRF901LT1 , MRF902 .

History: MRF904

 

 
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