MRF835
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF835
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 36
V
Tensión colector-emisor (Vce): 16
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO128
Búsqueda de reemplazo de transistor bipolar MRF835
MRF835
Datasheet (PDF)
9.1. Size:101K motorola
mrf8372r1 mrf8372r2.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF8372/DThe RF LineNPN SiliconMRF8372R1, R2RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSIS
9.2. Size:181K motorola
mrf837.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF837/DThe RF LineNPN SiliconMRF837RF Low Power TransistorMRF8372, R1, R2Designed primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)
9.3. Size:181K motorola
mrf837re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF837/DThe RF LineNPN SiliconMRF837RF Low Power TransistorMRF8372, R1, R2Designed primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)
9.4. Size:101K motorola
mrf8372rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF8372/DThe RF LineNPN SiliconMRF8372R1, R2RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSIS
9.5. Size:106K motorola
mrf839fr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF839F/DThe RF LineNPN SiliconMRF839FRF Power Transistors. . . designed for 12.5 Volt UHF largesignal, commonemitter amplifierapplications in industrial and commercial FM equipment operating in the rangeof 806960 MHz. Specified 12.5 V, 870 MHz Characteristics3.0 W, 806960 MHzOutput Power = 3.0 Wa
9.6. Size:106K motorola
mrf839f.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF839F/DThe RF LineNPN SiliconMRF839FRF Power Transistors. . . designed for 12.5 Volt UHF largesignal, commonemitter amplifierapplications in industrial and commercial FM equipment operating in the rangeof 806960 MHz. Specified 12.5 V, 870 MHz Characteristics3.0 W, 806960 MHzOutput Power = 3.0 Wa
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
