All Transistors. MRF835 Datasheet

 

MRF835 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MRF835
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO128

 MRF835 Transistor Equivalent Substitute - Cross-Reference Search

   

MRF835 Datasheet (PDF)

 9.1. Size:101K  motorola
mrf8372r1 mrf8372r2.pdf

MRF835
MRF835

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF8372/DThe RF LineNPN SiliconMRF8372R1, R2RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSIS

 9.2. Size:181K  motorola
mrf837.pdf

MRF835
MRF835

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF837/DThe RF LineNPN SiliconMRF837RF Low Power TransistorMRF8372, R1, R2Designed primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)

 9.3. Size:181K  motorola
mrf837re.pdf

MRF835
MRF835

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF837/DThe RF LineNPN SiliconMRF837RF Low Power TransistorMRF8372, R1, R2Designed primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)

 9.4. Size:101K  motorola
mrf8372rev0.pdf

MRF835
MRF835

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF8372/DThe RF LineNPN SiliconMRF8372R1, R2RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSIS

 9.5. Size:106K  motorola
mrf839fr.pdf

MRF835
MRF835

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF839F/DThe RF LineNPN SiliconMRF839FRF Power Transistors. . . designed for 12.5 Volt UHF largesignal, commonemitter amplifierapplications in industrial and commercial FM equipment operating in the rangeof 806960 MHz. Specified 12.5 V, 870 MHz Characteristics3.0 W, 806960 MHzOutput Power = 3.0 Wa

 9.6. Size:106K  motorola
mrf839f.pdf

MRF835
MRF835

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF839F/DThe RF LineNPN SiliconMRF839FRF Power Transistors. . . designed for 12.5 Volt UHF largesignal, commonemitter amplifierapplications in industrial and commercial FM equipment operating in the rangeof 806960 MHz. Specified 12.5 V, 870 MHz Characteristics3.0 W, 806960 MHzOutput Power = 3.0 Wa

 9.7. Size:43K  njs
mrf839.pdf

MRF835

 9.8. Size:44K  njs
mrf839f.pdf

MRF835

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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