2N4999
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4999
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO59
Búsqueda de reemplazo de transistor bipolar 2N4999
2N4999
Datasheet (PDF)
9.1. Size:10K planeta
2n4991.pdf
2N4991 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10sec pulse width) 1 P Power dissipation, mW 300
9.2. Size:9K planeta
2n4992.pdf
2N4992 Silicon bilateral switch (SBS) in package TO-92 0.45max0.7max15.2 2.5214.51.6 5.2 34.2Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10sec pulse width) 1 P Power dissipation, mW 300 Electri
9.3. Size:9K planeta
2n4993.pdf
2N4993 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10sec pulse width) 1 P Power dissipation, mW 300
9.4. Size:10K planeta
2n4990.pdf
2N4990 Silicon unilateral switch (SUS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Parameter, units Limits Vrrm Peak reverse voltage, V -30 IT(rms) DC forward anode current, mA 175 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10sec pulse width)
Otros transistores... 2N4982
, 2N498A
, 2N499
, 2N4994
, 2N4995
, 2N4996
, 2N4997
, 2N4998
, 2222A
, 2N499A
, 2N50
, 2N500
, 2N5000
, 2N5000SM
, 2N5001
, 2N5001S
, 2N5001SM
.