2N4999 Datasheet and Replacement
Type Designator: 2N4999
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO59
2N4999 Substitution
2N4999 Datasheet (PDF)
2n4991.pdf

2N4991 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10sec pulse width) 1 P Power dissipation, mW 300
2n4992.pdf

2N4992 Silicon bilateral switch (SBS) in package TO-92 0.45max0.7max15.2 2.5214.51.6 5.2 34.2Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10sec pulse width) 1 P Power dissipation, mW 300 Electri
2n4993.pdf

2N4993 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10sec pulse width) 1 P Power dissipation, mW 300
Datasheet: 2N4982 , 2N498A , 2N499 , 2N4994 , 2N4995 , 2N4996 , 2N4997 , 2N4998 , B647 , 2N499A , 2N50 , 2N500 , 2N5000 , 2N5000SM , 2N5001 , 2N5001S , 2N5001SM .
History: LBC857BWT1G | 2N4997 | MCH3007
Keywords - 2N4999 transistor datasheet
2N4999 cross reference
2N4999 equivalent finder
2N4999 lookup
2N4999 substitution
2N4999 replacement
History: LBC857BWT1G | 2N4997 | MCH3007



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