NS666 Todos los transistores

 

NS666 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NS666
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 50
     - Selección de transistores por parámetros

 

NS666 Datasheet (PDF)

 0.1. Size:412K  aosemi
aons66609.pdf pdf_icon

NS666

AONS66609TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 0.2. Size:419K  aosemi
aons66641t.pdf pdf_icon

NS666

AONS66641TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 325A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 0.3. Size:377K  aosemi
aons66612.pdf pdf_icon

NS666

AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)

 0.4. Size:411K  aosemi
aons66620.pdf pdf_icon

NS666

AONS66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: NSVMUN5331DW1T1G | BF253-3 | ZTX108BM | 2SC1651 | BD235 | KTC813U | 41501

 

 
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