NS666 Datasheet and Replacement
Type Designator: NS666
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
NS666 Substitution
NS666 Datasheet (PDF)
aons66609.pdf

AONS66609TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66641t.pdf

AONS66641TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 325A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66612.pdf

AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)
aons66620.pdf

AONS66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
Datasheet: NS4234 , NS475 , NS479 , NS6063 , NS6065 , NS6207 , NS662 , NS664 , TIP31 , NS668 , NS731A , NS733 , NS9731 , NSD102 , NSD103 , NSD104 , NSD105 .
History: RN4986FE | 2SC2572 | SF132 | 2SD1322 | BF254 | KTA1551T | 2SC1416A
Keywords - NS666 transistor datasheet
NS666 cross reference
NS666 equivalent finder
NS666 lookup
NS666 substitution
NS666 replacement
History: RN4986FE | 2SC2572 | SF132 | 2SD1322 | BF254 | KTA1551T | 2SC1416A



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