P308 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P308
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 120 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Ganancia de corriente contínua (hfe): 30
Búsqueda de reemplazo de transistor bipolar P308
P308 Datasheet (PDF)
dp3080.pdf
DP3080TO-252Datasheet of DP3080TO-25218033419374QQ2171689052Shenzhen Developer Microelectronics Co.,Ltd.707-710Address:Unit 7-10,7/F.,west block, Skyworth Semiconductor design Building,The 4th on High-tech Zone, Nanshan
dmp3085lsd.pdf
DMP3085LSDP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX Package TA = +25C Low Input Capacitance 70m @VGS = -10V -3.9A Fast Switching Speed -30V SO-8 95m @VGS = -4.5V -3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qua
dmp3085lss.pdf
DMP3085LSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX Package TA = +25C Low Input Capacitance 70m @VGS = -10V -3.8A Fast Switching Speed -30V SO-8 95m @VGS = -4.5V -3.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qua
bsp3081.pdf
Preliminary dataBSP308SIPMOS Small-Signal-TransistorFeaturesProduct Summary N-Channel Drain source voltage VDS 30 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.05 Logic Level Continuous drain current ID 4.7 A dv/dt rated4321VPS05163Type Package Ordering Code Pin 1 Pin 2/4 PIN 3BSP308 SOT-223 Q67000-S4011 G D SMaximum Ratings,a
bsp308.pdf
Preliminary dataBSP308SIPMOS Power-TransistorFeaturesProduct Summary N-Channel Drain source voltage VDS 30 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.05 Logic Level Continuous drain current ID 4.7 A dv/dt rated4321VPS05163Type Package Ordering Code Pin 1 Pin 2/4 PIN 3BSP308 SOT-223 Q67000-S4011 G D SMaximum Ratings,at Tj =
ncep3085eg.pdf
Pb Free Producthttp://www.ncepower.com NCEP3085EGNCE N-Channel Super Trench Power MOSFET Description The NCEP3085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
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