P308 Todos los transistores

 

P308 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P308
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 120 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Ganancia de corriente contínua (hfe): 30
     - Selección de transistores por parámetros

 

P308 Datasheet (PDF)

 ..1. Size:747K  russia
p307-v p308 p309.pdf pdf_icon

P308

 0.1. Size:1314K  1
dp3080.pdf pdf_icon

P308

DP3080TO-252Datasheet of DP3080TO-25218033419374QQ2171689052Shenzhen Developer Microelectronics Co.,Ltd.707-710Address:Unit 7-10,7/F.,west block, Skyworth Semiconductor design Building,The 4th on High-tech Zone, Nanshan

 0.2. Size:235K  diodes
dmp3085lsd.pdf pdf_icon

P308

DMP3085LSDP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX Package TA = +25C Low Input Capacitance 70m @VGS = -10V -3.9A Fast Switching Speed -30V SO-8 95m @VGS = -4.5V -3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qua

 0.3. Size:162K  diodes
dmp3085lss.pdf pdf_icon

P308

DMP3085LSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX Package TA = +25C Low Input Capacitance 70m @VGS = -10V -3.8A Fast Switching Speed -30V SO-8 95m @VGS = -4.5V -3.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qua

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 16318 | CSC2003 | 2SC4959 | P609 | PBLS2001D | 2SC486Y | DH3725CN

 

 
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