P308 Datasheet. Specs and Replacement

Type Designator: P308  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

 P308 Substitution

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P308 datasheet

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DP3080 TO-252 Datasheet of DP3080 TO-252 18033419374 QQ 2171689052 Shenzhen Developer Microelectronics Co.,Ltd. 707-710 Address Unit 7-10,7/F.,west block, Skyworth Semiconductor design Building, The 4th on High-tech Zone, Nanshan ... See More ⇒

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DMP3085LSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) MAX Package TA = +25 C Low Input Capacitance 70m @VGS = -10V -3.9A Fast Switching Speed -30V SO-8 95m @VGS = -4.5V -3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qua... See More ⇒

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DMP3085LSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) MAX Package TA = +25 C Low Input Capacitance 70m @VGS = -10V -3.8A Fast Switching Speed -30V SO-8 95m @VGS = -4.5V -3.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qua... See More ⇒

Detailed specifications: P304, P306, P306A, P307, P307A, P307B, P307G, P307V, BDT88, P309, P401, P402, P403, P403A, P416, P416A, P416B

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