P423
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P423
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-base (Vcb): 10
V
Tensión colector-emisor (Vce): 10
V
Corriente del colector DC máxima (Ic): 0.02
A
Temperatura operativa máxima (Tj): 75
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 24
Búsqueda de reemplazo de transistor bipolar P423
P423
Datasheet (PDF)
0.1. Size:290K international rectifier
irfp4232pbf.pdf 
PD - 96965AIRFP4232PbFPDP MOSFETFeaturesKey Parametersl Advanced process technologyVDS min 250 Vl Key parameters optimized for PDP Sustain & Energy Recovery applicationsVDS (Avalanche) typ. 300 Vl Low EPULSE rating to reduce the powermRDS(ON) typ. @ 10V 30 dissipation in Sustain & ER applicationsEPULSE typ. 310 Jl Low QG for fast responseIRP max @ TC= 100Cl
0.2. Size:93K ape
ap4230gm-hf.pdf
AP4230GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 7A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2S2designer with the best combination of f
0.3. Size:178K ape
ap4232agm.pdf
AP4232AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 23mD1D1 Dual N MOSFET Package ID 7.8AG2S2G1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,ruggedized devi
0.4. Size:169K ape
ap4232gm.pdf
AP4232GM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 22mD1D1 Dual N MOSFET Package ID 7.8AG2 RoHS Compliant & Halogen-FreeS2G1SO-8S1DescriptionAP4232 series are fro
0.5. Size:93K ape
ap4232bgm-hf.pdf
AP4232BGM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 22m Fast Switching Characteristic ID 7.6A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2S2designer with the best combination o
0.6. Size:207K ape
ap4232gm-hf.pdf
AP4232GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 22mD1D1 Dual N MOSFET Package ID 7.8AG2 RoHS CompliantS2G1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switchi
0.7. Size:187K samhop
stb423s stp423s.pdf
GreenProductS T B / P 4 2 3 SS amHop Microelectronics C orp. Feb.26,2007P-Channel Logic Level Enhancement Mode Field Effect TransistorPR ODUC T S UMMAR YF E ATUR E S4R DS (ON) ( m ) MaxVDS S IDS uper high dense cell design for extremely low R DS (ON).9.5 @ VG S = -10V High power and current handling capability.- 40V - 65ATO-220 & TO-263 package.12.5 @ VG S
Otros transistores... 2SA1803O
, 2SA1803R
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, 2SA1804O
, 2SA1804R
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, 2SA1815-3
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.
