P423 datasheet и подбор замены

 ..1. Size:530K  russia
 p422 p423.pdf 

 0.1. Size:290K  international rectifier
 irfp4232pbf.pdf 

PD - 96965A IRFP4232PbF PDP MOSFET Features Key Parameters l Advanced process technology VDS min 250 V l Key parameters optimized for PDP Sustain & Energy Recovery applications VDS (Avalanche) typ. 300 V l Low EPULSE rating to reduce the power m RDS(ON) typ. @ 10V 30 dissipation in Sustain & ER applications EPULSE typ. 310 J l Low QG for fast response IRP max @ TC= 100 C l

 0.2. Size:93K  ape
 ap4230gm-hf.pdf 

AP4230GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 7A Halogen Free & RoHS Compliant Product D2 D2 D1 Description D1 Advanced Power MOSFETs from APEC provide the G2 S2 designer with the best combination of f

 0.3. Size:178K  ape
 ap4232agm.pdf 

AP4232AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 23m D1 D1 Dual N MOSFET Package ID 7.8A G2 S2 G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized devi

 0.4. Size:169K  ape
 ap4232gm.pdf 

AP4232GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 22m D1 D1 Dual N MOSFET Package ID 7.8A G2 RoHS Compliant & Halogen-Free S2 G1 SO-8 S1 Description AP4232 series are fro

 0.5. Size:93K  ape
 ap4232bgm-hf.pdf 

AP4232BGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 22m Fast Switching Characteristic ID 7.6A Halogen Free & RoHS Compliant Product D2 D2 D1 Description D1 Advanced Power MOSFETs from APEC provide the G2 S2 designer with the best combination o

 0.6. Size:207K  ape
 ap4232gm-hf.pdf 

AP4232GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 22m D1 D1 Dual N MOSFET Package ID 7.8A G2 RoHS Compliant S2 G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switchi

 0.7. Size:187K  samhop
 stb423s stp423s.pdf 

Green Product S T B / P 4 2 3 S S amHop Microelectronics C orp. Feb.26,2007 P-Channel Logic Level Enhancement Mode Field Effect Transistor PR ODUC T S UMMAR Y F E ATUR E S 4 R DS (ON) ( m ) Max VDS S ID S uper high dense cell design for extremely low R DS (ON) . 9.5 @ VG S = -10V High power and current handling capability. - 40V - 65A TO-220 & TO-263 package. 12.5 @ VG S