P423 Datasheet, Equivalent, Cross Reference Search
Type Designator: P423
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 24
Noise Figure, dB: -
P423 Transistor Equivalent Substitute - Cross-Reference Search
P423 Datasheet (PDF)
irfp4232pbf.pdf
PD - 96965AIRFP4232PbFPDP MOSFETFeaturesKey Parametersl Advanced process technologyVDS min 250 Vl Key parameters optimized for PDP Sustain & Energy Recovery applicationsVDS (Avalanche) typ. 300 Vl Low EPULSE rating to reduce the powermRDS(ON) typ. @ 10V 30 dissipation in Sustain & ER applicationsEPULSE typ. 310 Jl Low QG for fast responseIRP max @ TC= 100Cl
ap4230gm-hf.pdf
AP4230GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 7A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2S2designer with the best combination of f
ap4232agm.pdf
AP4232AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 23mD1D1 Dual N MOSFET Package ID 7.8AG2S2G1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,ruggedized devi
ap4232gm.pdf
AP4232GM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 22mD1D1 Dual N MOSFET Package ID 7.8AG2 RoHS Compliant & Halogen-FreeS2G1SO-8S1DescriptionAP4232 series are fro
ap4232bgm-hf.pdf
AP4232BGM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 22m Fast Switching Characteristic ID 7.6A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2S2designer with the best combination o
ap4232gm-hf.pdf
AP4232GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 22mD1D1 Dual N MOSFET Package ID 7.8AG2 RoHS CompliantS2G1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switchi
stb423s stp423s.pdf
GreenProductS T B / P 4 2 3 SS amHop Microelectronics C orp. Feb.26,2007P-Channel Logic Level Enhancement Mode Field Effect TransistorPR ODUC T S UMMAR YF E ATUR E S4R DS (ON) ( m ) MaxVDS S IDS uper high dense cell design for extremely low R DS (ON).9.5 @ VG S = -10V High power and current handling capability.- 40V - 65ATO-220 & TO-263 package.12.5 @ VG S
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 3DD128FH5D
History: 3DD128FH5D
LIST
Last Update
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050