PMD12K40 Todos los transistores

 

PMD12K40 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMD12K40
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10000
   Paquete / Cubierta: TO3
 

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PMD12K40 Datasheet (PDF)

 8.1. Size:198K  inchange semiconductor
 pmd12k80.pdf pdf_icon

PMD12K40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD12K80 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to type PMD13K80 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE UN

 8.2. Size:199K  inchange semiconductor
 pmd12k100.pdf pdf_icon

PMD12K40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD12K100 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) Complement to type PMD13K100 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE

Otros transistores... PMD10K40 , PMD10K60 , PMD10K80 , PMD11K100 , PMD11K40 , PMD11K60 , PMD11K80 , PMD12K100 , TIP36C , PMD12K60 , PMD12K80 , PMD13K100 , PMD13K40 , PMD13K60 , PMD13K80 , PMD15K200 , PMD1600K .

 

 
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