All Transistors. PMD12K40 Datasheet

 

PMD12K40 Datasheet, Equivalent, Cross Reference Search

Type Designator: PMD12K40

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Forward Current Transfer Ratio (hFE), MIN: 10000

Noise Figure, dB: -

Package: TO3

PMD12K40 Transistor Equivalent Substitute - Cross-Reference Search

 

PMD12K40 Datasheet (PDF)

8.1. pmd12k100.pdf Size:199K _inchange_semiconductor

PMD12K40 PMD12K40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD12K100 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) Complement to type PMD13K100 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE

8.2. pmd12k80.pdf Size:198K _inchange_semiconductor

PMD12K40 PMD12K40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD12K80 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to type PMD13K80 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE UN

 

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , TIP2955 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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