All Transistors. PMD12K40 Datasheet

 

PMD12K40 Datasheet and Replacement


   Type Designator: PMD12K40
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10000
   Noise Figure, dB: -
   Package: TO3
 

 PMD12K40 Substitution

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PMD12K40 Datasheet (PDF)

 8.1. Size:198K  inchange semiconductor
 pmd12k80.pdf pdf_icon

PMD12K40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD12K80 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to type PMD13K80 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE UN

 8.2. Size:199K  inchange semiconductor
 pmd12k100.pdf pdf_icon

PMD12K40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD12K100 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) Complement to type PMD13K100 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE

Datasheet: PMD10K40 , PMD10K60 , PMD10K80 , PMD11K100 , PMD11K40 , PMD11K60 , PMD11K80 , PMD12K100 , TIP36C , PMD12K60 , PMD12K80 , PMD13K100 , PMD13K40 , PMD13K60 , PMD13K80 , PMD15K200 , PMD1600K .

History: 2SA1744 | KT8177A | FMMT491A | D44VH3 | 2SC732 | D44VH2

Keywords - PMD12K40 transistor datasheet

 PMD12K40 cross reference
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