PMD13K60 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMD13K60

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 800

Encapsulados: TO3

 Búsqueda de reemplazo de PMD13K60

- Selecciónⓘ de transistores por parámetros

 

PMD13K60 datasheet

 8.1. Size:199K  inchange semiconductor
 pmd13k80.pdf pdf_icon

PMD13K60

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K80 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD12K80 APPLICATIONS Designed for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VALUE U

 8.2. Size:198K  inchange semiconductor
 pmd13k100.pdf pdf_icon

PMD13K60

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K100 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) Complement to type PMD12K100 APPLICATIONS Designed for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VALU

Otros transistores... PMD11K60, PMD11K80, PMD12K100, PMD12K40, PMD12K60, PMD12K80, PMD13K100, PMD13K40, D667, PMD13K80, PMD15K200, PMD1600K, PMD1601K, PMD1602K, PMD1603K, PMD16K100, PMD16K40