All Transistors. PMD13K60 Datasheet

 

PMD13K60 Datasheet and Replacement


   Type Designator: PMD13K60
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 800
   Noise Figure, dB: -
   Package: TO3
 

 PMD13K60 Substitution

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PMD13K60 Datasheet (PDF)

 8.1. Size:199K  inchange semiconductor
 pmd13k80.pdf pdf_icon

PMD13K60

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K80 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD12K80 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE U

 8.2. Size:198K  inchange semiconductor
 pmd13k100.pdf pdf_icon

PMD13K60

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K100 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) Complement to type PMD12K100 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALU

Datasheet: PMD11K60 , PMD11K80 , PMD12K100 , PMD12K40 , PMD12K60 , PMD12K80 , PMD13K100 , PMD13K40 , S9018 , PMD13K80 , PMD15K200 , PMD1600K , PMD1601K , PMD1602K , PMD1603K , PMD16K100 , PMD16K40 .

History: BCX5516TA | 2SB486

Keywords - PMD13K60 transistor datasheet

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