PMD17K80 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMD17K80

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 220 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 800

Encapsulados: TO3

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PMD17K80 datasheet

 ..1. Size:199K  inchange semiconductor
 pmd17k80.pdf pdf_icon

PMD17K80

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) Complement to type PMD16K80 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER

 8.1. Size:199K  inchange semiconductor
 pmd17k60.pdf pdf_icon

PMD17K80

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -60V(Min) Complement to type PMD16K60 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER

 8.2. Size:199K  inchange semiconductor
 pmd17k100.pdf pdf_icon

PMD17K80

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to type PMD16K100 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAME

 9.1. Size:200K  inchange semiconductor
 pmd1702k.pdf pdf_icon

PMD17K80

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1702K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD1602K APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER V

MOSTRAR MÁS

Otros transistores... PMD16K80, PMD1700K, PMD1701K, PMD1702K, PMD1703K, PMD17K100, PMD17K40, PMD17K60, BC337, PMD18K100, PMD18K40, PMD18K60, PMD18K80, PMD19K100, PMD19K200, PMD19K40, PMD19K60