PMD17K80 Datasheet. Specs and Replacement

Type Designator: PMD17K80  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 220 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 800

Noise Figure, dB: -

Package: TO3

 PMD17K80 Substitution

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PMD17K80 datasheet

 ..1. Size:199K  inchange semiconductor

pmd17k80.pdf pdf_icon

PMD17K80

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) Complement to type PMD16K80 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER... See More ⇒

 8.1. Size:199K  inchange semiconductor

pmd17k60.pdf pdf_icon

PMD17K80

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -60V(Min) Complement to type PMD16K60 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER... See More ⇒

 8.2. Size:199K  inchange semiconductor

pmd17k100.pdf pdf_icon

PMD17K80

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to type PMD16K100 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAME... See More ⇒

 9.1. Size:200K  inchange semiconductor

pmd1702k.pdf pdf_icon

PMD17K80

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1702K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD1602K APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER V... See More ⇒

Detailed specifications: PMD16K80, PMD1700K, PMD1701K, PMD1702K, PMD1703K, PMD17K100, PMD17K40, PMD17K60, BC337, PMD18K100, PMD18K40, PMD18K60, PMD18K80, PMD19K100, PMD19K200, PMD19K40, PMD19K60

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