PN918R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PN918R

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 600 MHz

Capacitancia de salida (Cc): 1.7 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO92

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PN918R datasheet

 9.1. Size:748K  fairchild semi
 pn918 mmbt918.pdf pdf_icon

PN918R

PN918 MMBT918 C E C TO-92 B B E SOT-23 Mark 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 30 V

 9.2. Size:62K  central
 2n918 pn918.pdf pdf_icon

PN918R

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.3. Size:624K  onsemi
 pn918 mmbt918.pdf pdf_icon

PN918R

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... PN750, PN751, PN753, PN834, PN835, PN901, PN911, PN918, 2N3906, PN929, PN929A, PN930, PN930A, PN930R, PO38, PO39, PT1837