PN918R Datasheet, Equivalent, Cross Reference Search
Type Designator: PN918R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 1.7 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO92
PN918R Transistor Equivalent Substitute - Cross-Reference Search
PN918R Datasheet (PDF)
pn918 mmbt918.pdf
PN918 MMBT918CEC TO-92BBE SOT-23Mark: 3BNPN RF TransistorThis device is designed for use as RF amplifiers, oscillators andmultipliers with collector currents in the 1.0 mA to 30 mA range.Sourced from Process 43.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 30 V
2n918 pn918.pdf
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pn918 mmbt918.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: CV7723-O | BUL52ASMD | BF324
