R340 Todos los transistores

 0.1. Size:253K  infineon
 ipi90r340c3.pdf

IPI90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 0.34 DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO262 (I2Pak) PG-TO262 DS

 0.2. Size:637K  infineon
 ipw90r340c3.pdf

IPW90R340C3 C IMOS # A0IN U . J6A>;> 9 for industrial grade applications 688DG9>CC6CI U 2 AIG6 ADL

 0.3. Size:267K  infineon
 ipa90r340c3.pdf

IPA90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.34 DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO220 Fullpak PG-TO220 FP

 0.4. Size:911K  infineon
 ipb90r340c3.pdf

IPB90R340C3 CoolMOS Power Transistor Product Summary Features VDS @ TJ=25 C 900 V Lowest figure-of-merit RON x Qg RDS(on),max @TJ=25 C 0.34 W Extreme dv/dt rated Qg,typ 94 nC High peak current capability Qualified according to JEDEC1) for industrial applications PG-TO263 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is desi

 0.5. Size:1798K  infineon
 ipl65r340cfd.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V Thinpak 650V CoolMOS CFD2 Power Transistor IPL65R340CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPL65R340CFD ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ

 0.6. Size:286K  infineon
 ipp90r340c3.pdf

IPP90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 0.34 DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Worldwide best R in TO220 DS,on

 0.7. Size:847K  oriental semi
 oss65r340df.pdf

 0.8. Size:929K  oriental semi
 osg90r340kf.pdf

 0.9. Size:861K  oriental semi
 oss65r340ff.pdf

 0.10. Size:901K  oriental semi
 osg65r340fzf.pdf

 0.11. Size:852K  oriental semi
 osg65r340dzf.pdf

 0.12. Size:905K  oriental semi
 oss65r340jf.pdf

 0.13. Size:923K  oriental semi
 osg60r340ft3f.pdf

 0.14. Size:936K  oriental semi
 osg60r340dt3f.pdf

 0.15. Size:1169K  sanrise-tech
 src65r340ec.pdf

Datasheet 340m , 600V, Super Junction N-Channel Power MOSFET SRC65R340EC General Description Symbol The Sanrise SRC65R340EC is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density

 0.16. Size:757K  cn salltech
 sr3401.pdf

Leading Circuit Protection Products and Solutions SR3401 30V P-Channel MOSFET Product Summary SOT-23 V(BR)DSS RDS(on)MAX ID 65m @-10V D -30V 75m @-4.5V -4.2A 90m @-2.5V G Feature S TrenchFET Power MOSFET Schematic diagram Exceptional on-resistance and maximum DC current capability Application D DC/DC Converter Load Switch for Portable Devices Battery S

 0.17. Size:692K  cn salltech
 sr3400.pdf

Leading Circuit Protection SR3400 Products and Solutions 30V N-Channel MOSFET Product Summary SOT-23 V R I (BR)DSS DS(on)MAX D 35m @10V 30V 40m @4.5V 5.8A 52m @2.5V Feature TrenchFET Power MOSFET Schematic diagram Excellent RDS(on) and Low Gate Charge Application DC/DC Converter Load Switch for Portable Devices Battery Switch MARKING ABSOLUTE MAXIMUM

 0.18. Size:243K  inchange semiconductor
 ipw90r340c3.pdf

isc N-Channel MOSFET Transistor IPW90R340C3 IIPW90R340C3 FEATURES Static drain-source on-resistance RDS(on) 340m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 0.19. Size:225K  inchange semiconductor
 ipa90r340c3.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA90R340C3 FEATURES With TO-220F Package Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R = 0.34 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

 0.20. Size:258K  inchange semiconductor
 ipb90r340c3.pdf

Isc N-Channel MOSFET Transistor IPB90R340C3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 0.21. Size:245K  inchange semiconductor
 ipp90r340c3.pdf

isc N-Channel MOSFET Transistor IPP90R340C3 IIPP90R340C3 FEATURES Static drain-source on-resistance RDS(on) 0.34 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 0.22. Size:1551K  cn apm
 apj30n65f apj30n65p apj30n65t ap65r340.pdf

APJ30N65FIPIT (AP65R340) 650V N-Channel Enhancement Mode MOSFET Description The APJ30N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 740V