R340
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R340
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Capacitancia de salida (Cc): 8
pF
Ganancia de corriente contínua (hfe): 60
Búsqueda de reemplazo de transistor bipolar R340
R340
Datasheet (PDF)
0.1. Size:253K infineon
ipi90r340c3.pdf 
IPI90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO262 (I2Pak)PG-TO262DS
0.2. Size:637K infineon
ipw90r340c3.pdf
IPW90R340C3CIMOS #:A0INU . J6A>;>:9 for industrial grade applications 688DG9>CC6CIU 2 AIG6 ADL
0.3. Size:267K infineon
ipa90r340c3.pdf
IPA90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO220 Fullpak PG-TO220 FP
0.4. Size:911K infineon
ipb90r340c3.pdf
IPB90R340C3CoolMOS Power TransistorProduct SummaryFeaturesVDS @ TJ=25C 900 V Lowest figure-of-merit RON x QgRDS(on),max @TJ=25C 0.34 W Extreme dv/dt ratedQg,typ 94 nC High peak current capability Qualified according to JEDEC1) for industrial applicationsPG-TO263 Pb-free lead plating; RoHS compliant Ultra low gate chargeCoolMOS 900V is desi
0.5. Size:1798K infineon
ipl65r340cfd.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R340CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R340CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ
0.6. Size:286K infineon
ipp90r340c3.pdf
IPP90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 Worldwide best R in TO220DS,on
0.15. Size:1169K sanrise-tech
src65r340ec.pdf
Datasheet340m, 600V, Super Junction N-Channel Power MOSFET SRC65R340ECGeneral Description SymbolThe Sanrise SRC65R340EC is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
0.16. Size:757K cn salltech
sr3401.pdf
Leading Circuit ProtectionProducts and SolutionsSR340130V P-Channel MOSFETProduct SummarySOT-23V(BR)DSS RDS(on)MAX ID65m@-10VD-30V 75m@-4.5V -4.2A90m@-2.5VGFeatureS TrenchFET Power MOSFETSchematic diagram Exceptional on-resistance and maximum DC current capabilityApplication D DC/DC Converter Load Switch for Portable Devices Battery S
0.17. Size:692K cn salltech
sr3400.pdf
Leading Circuit ProtectionSR3400Products and Solutions30V N-Channel MOSFETProduct SummarySOT-23V R I(BR)DSS DS(on)MAX D35m@10V30V 40m@4.5V 5.8A52m@2.5VFeature TrenchFET Power MOSFETSchematic diagram Excellent RDS(on) and Low Gate ChargeApplication DC/DC Converter Load Switch for Portable Devices Battery SwitchMARKING:ABSOLUTE MAXIMUM
0.18. Size:243K inchange semiconductor
ipw90r340c3.pdf
isc N-Channel MOSFET Transistor IPW90R340C3IIPW90R340C3FEATURESStatic drain-source on-resistance:RDS(on)340mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
0.19. Size:225K inchange semiconductor
ipa90r340c3.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA90R340C3FEATURESWith TO-220F PackageDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R = 0.34(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
0.20. Size:258K inchange semiconductor
ipb90r340c3.pdf
Isc N-Channel MOSFET Transistor IPB90R340C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
0.21. Size:245K inchange semiconductor
ipp90r340c3.pdf
isc N-Channel MOSFET Transistor IPP90R340C3IIPP90R340C3FEATURESStatic drain-source on-resistance:RDS(on) 0.34Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... 2N3200
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