IPI90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO262 (I2Pak)PG-TO262DS

IPW90R340C3CIMOS #:A0INU . J6A>;>:9 for industrial grade applications 688DG9>CC6CIU 2 AIG6 ADL

IPA90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO220 Fullpak PG-TO220 FP

IPB90R340C3CoolMOS Power TransistorProduct SummaryFeaturesVDS @ TJ=25C 900 V Lowest figure-of-merit RON x QgRDS(on),max @TJ=25C 0.34 W Extreme dv/dt ratedQg,typ 94 nC High peak current capability Qualified according to JEDEC1) for industrial applicationsPG-TO263 Pb-free lead plating; RoHS compliant Ultra low gate chargeCoolMOS 900V is desi

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R340CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R340CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ

IPP90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 Worldwide best R in TO220DS,on

Datasheet340m, 600V, Super Junction N-Channel Power MOSFET SRC65R340ECGeneral Description SymbolThe Sanrise SRC65R340EC is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Leading Circuit ProtectionProducts and SolutionsSR340130V P-Channel MOSFETProduct SummarySOT-23V(BR)DSS RDS(on)MAX ID65m@-10VD-30V 75m@-4.5V -4.2A90m@-2.5VGFeatureS TrenchFET Power MOSFETSchematic diagram Exceptional on-resistance and maximum DC current capabilityApplication D DC/DC Converter Load Switch for Portable Devices Battery S

Leading Circuit ProtectionSR3400Products and Solutions30V N-Channel MOSFETProduct SummarySOT-23V R I(BR)DSS DS(on)MAX D35m@10V30V 40m@4.5V 5.8A52m@2.5VFeature TrenchFET Power MOSFETSchematic diagram Excellent RDS(on) and Low Gate ChargeApplication DC/DC Converter Load Switch for Portable Devices Battery SwitchMARKING:ABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IPW90R340C3IIPW90R340C3FEATURESStatic drain-source on-resistance:RDS(on)340mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA90R340C3FEATURESWith TO-220F PackageDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R = 0.34(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

Isc N-Channel MOSFET Transistor IPB90R340C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

isc N-Channel MOSFET Transistor IPP90R340C3IIPP90R340C3FEATURESStatic drain-source on-resistance:RDS(on) 0.34Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeABSOLUTE MAXIMUM RATINGS(T =25)a