SD4261F Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SD4261F

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.03 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2000 MHz

Capacitancia de salida (Cc): 2.5 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: LCC2

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SD4261F datasheet

 9.1. Size:116K  inchange semiconductor
 2sd425 2sd426.pdf pdf_icon

SD4261F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION With TO-3 package Complement to type 2SB555/556 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi

 9.2. Size:208K  inchange semiconductor
 2sd426.pdf pdf_icon

SD4261F

isc Silicon NPN Power Transistors 2SD426 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SB556 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for high-fidelity audio freq

Otros transistores... SD2904AF, SD2907A, SD2907AF, SD3019F, SD3866A, SD3866AF, SD3960F, SD4261, TIP120, SD4957, SD4957F, SD5109, SD5109F, SD918, SD918F, SDM4001, SDM4002