All Transistors. SD4261F Datasheet

 

SD4261F Datasheet and Replacement


   Type Designator: SD4261F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2000 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: LCC2
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SD4261F Datasheet (PDF)

 9.1. Size:116K  inchange semiconductor
 2sd425 2sd426.pdf pdf_icon

SD4261F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION With TO-3 package Complement to type 2SB555/556 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifi

 9.2. Size:208K  inchange semiconductor
 2sd426.pdf pdf_icon

SD4261F

isc Silicon NPN Power Transistors 2SD426DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB556Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for high-fidelity audio freq

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FCG93AX | TN3691 | KT685V | DTD163TA | BD827-10 | 2N2916 | KRC103

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