SE8010 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SE8010

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.33 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 60 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 140 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO98-2

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SE8010 datasheet

 0.1. Size:420K  cn sino-ic
 se80100ga.pdf pdf_icon

SE8010

SE80100GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =80V DS Voltage and Current Improved Shoot-Through R =6.0m @V =10 DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations

 9.1. Size:169K  onsemi
 kse800 kse801 kse802 kse803.pdf pdf_icon

SE8010

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.2. Size:536K  cn sino-ic
 se80130g.pdf pdf_icon

SE8010

 9.3. Size:471K  cn sino-ic
 se80130ga.pdf pdf_icon

SE8010

MOSTRAR MÁS

Otros transistores... SE6063, SE6562, SE6563, SE7005, SE7055, SE7056, SE8001, SE8002, 2SC828, SE8041, SE8042, SE8510, SE8520, SE8521, SE8541, SE8542, SE9300