SE8010
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SE8010
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.33
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 60
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 140
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 4
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO98-2
Búsqueda de reemplazo de transistor bipolar SE8010
SE8010
Datasheet (PDF)
0.1. Size:420K cn sino-ic
se80100ga.pdf 
SE80100GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =80VDSVoltage and Current Improved Shoot-Through R =6.0m @V =10DS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations
9.1. Size:169K onsemi
kse800 kse801 kse802 kse803.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.2. Size:536K cn sino-ic
se80130g.pdf
SE80130GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =80VDSoperation voltage. This device is suitable for R =3.6m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline
9.3. Size:471K cn sino-ic
se80130ga.pdf
SE80130GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =80VDSoperation voltage. This device is suitable for R =3.6m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline
9.4. Size:423K cn sino-ic
se80160g.pdf
SE80160GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =80VDSoperation voltage. This device is suitable for R =2.2m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline
Otros transistores... 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, TIP35C
, 2SA1805
, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.
