SE8010 Specs and Replacement
Type Designator: SE8010
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.33 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 140 °C
Electrical Characteristics
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO98-2
SE8010 Substitution
- BJT ⓘ Cross-Reference Search
SE8010 datasheet
SE80100GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =80V DS Voltage and Current Improved Shoot-Through R =6.0m @V =10 DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒
kse800 kse801 kse802 kse803.pdf ![]()
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: SE6063, SE6562, SE6563, SE7005, SE7055, SE7056, SE8001, SE8002, 2SC828, SE8041, SE8042, SE8510, SE8520, SE8521, SE8541, SE8542, SE9300
Keywords - SE8010 pdf specs
SE8010 cross reference
SE8010 equivalent finder
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History: 2SB556
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