SE8010 Specs and Replacement

Type Designator: SE8010

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.33 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 140 °C

Electrical Characteristics

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO98-2

 SE8010 Substitution

- BJT ⓘ Cross-Reference Search

 

SE8010 datasheet

 0.1. Size:420K  cn sino-ic

se80100ga.pdf pdf_icon

SE8010

SE80100GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =80V DS Voltage and Current Improved Shoot-Through R =6.0m @V =10 DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒

 9.1. Size:169K  onsemi

kse800 kse801 kse802 kse803.pdf pdf_icon

SE8010

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.2. Size:536K  cn sino-ic

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SE8010

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 9.3. Size:471K  cn sino-ic

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SE8010

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Detailed specifications: SE6063, SE6562, SE6563, SE7005, SE7055, SE7056, SE8001, SE8002, 2SC828, SE8041, SE8042, SE8510, SE8520, SE8521, SE8541, SE8542, SE9300

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